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PBSS4032SP PNP/PNP transistor

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Description

PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor Rev.2 * 13 October 2010 Product data sheet 1.Product profile 1.1 General de.
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

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Features

* Low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit

Applications

* DC-to-DC conversion
* Battery-driven devices
* Power management
* Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO IC ICM RCEsat collector-emitter voltage collector current peak collect

PBSS4032SP Distributors

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