* Low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit
PBSS4032SP Datasheet (767.56 KB)
PBSS4032SP
767.56 KB
Pnp/pnp transistor.
PBSS4032SP
30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor
Rev. 2
* 13 October 2010
Product data sheet
1. Product profile
1.1 General de.
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