10N80 Datasheet | Specifications & PDF Download

800V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=1.0 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fa

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISA10N80A Pb Lead Free Package and Finish VDSS 800V RDS(on)(Typ) ID (Max) 0.8Ÿ 10A

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PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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800V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=1.0 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fa

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance

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FQA10N80C 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET Features • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 44 nC) •

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SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal si

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Silan Microelectronics SVF10N80F/K_Datasheet 10A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N80F/K is an N-channel enhancement mode power MOS

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May 2007 PFJ10N80 / PFW10N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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PFI10N80A / PFB10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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UNISONIC TECHNOLOGIES CO., LTD 10N80 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMO

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MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low g

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May 2007 PFJ10N80 / PFW10N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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10A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =1.1Ω@ VGS = 10V  Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free  Low Reverse Transfer

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISW10N80A Pb Lead Free Package and Finish VDSS 800V RDS(on)(Typ) ID (Max) 0.8Ÿ 10A

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