10N80 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISA10N80A Pb Lead Free Package and Finish VDSS 800V RDS(on)(Typ) ID (Max) 0.8Ÿ 10A

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SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal si

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FQA10N80C 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET Features • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 44 nC) •

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MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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DTN10N80SJ/DTP10N80SJ/DTP10N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) m

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance

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10A,800V N-Channel Power Mosfet FEATURES  RDS(ON) =1.1Ω@ VGS = 10V  Ultra Low Gate Charge ( Typical 45 nC ) Pb Lead-free  Low Reverse Transfer

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISW10N80A Pb Lead Free Package and Finish VDSS 800V RDS(on)(Typ) ID (Max) 0.8Ÿ 10A

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UNISONIC TECHNOLOGIES CO., LTD 10N80 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMO

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXF

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXF

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BL10N80 Power MOSFET 1．Description Step-Down Converter BL10N80, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technol

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MSF10N80A 800V N-Channel MOSFET FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Ch

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DTP10N80/DTP10N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) max. at 25 °C (Ω) VGS = 10 V

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FDBL0210N80 N-Channel PowerTrench® MOSFET FDBL0210N80 N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.0 mΩ April 2015 Features „ Typical RDS(on) = 1.5

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MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

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FQA10N80C-F109 — N-Channel QFET® MOSFET FQA10N80C-F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS

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FQAF10N80 QFET FQAF10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using

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FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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