D2118 Datasheet | Specifications & PDF Download

Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50202-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M (

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Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain ch

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2SD2118(BR3DA2118D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features hFE ，，

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NEe Microcomputers, Inc. 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI. PD2118-3 [~OO~[~~~~ffirnW DESCR IPTION ThepPD21

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NEe Microcomputers, Inc. 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI. PD2118-3 [~OO~[~~~~ffirnW DESCR IPTION ThepPD21

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR (NPN) FEATURES z Low VCE(sat). VCE(s

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SMD Type Transistors Low VCE(sat) Transistor 2SD2118 Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +9.

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DGD2117/2118 SINGLE CHANNEL GATE DRIVER Description The DGD2117 and DGD2118 are high voltage / high speed gate drivers capable of driving one N-Chann

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HJ200205 Issued Date : 2002.04.01 Revised Date : 2008.04.09 Page No. : 1/5 HSD2118J LOW VCE(sat) TRA

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NEe Microcomputers, Inc. 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI. PD2118-3 [~OO~[~~~~ffirnW DESCR IPTION ThepPD21

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. :

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Low VCE(sat) Transistor (strobe flash) FEATURES  Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free  Excellent DC current gain chara

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Low VCE(sat) transistor (strobe flash) 2SD2118 zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain ch

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50202-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M (

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www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50307-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (×8/×16) FLASH MEMORY

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04

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Elektronische Bauelemente 2SD2118 5A , 50V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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Transys Electronics LIMITED TO-252-2Plastic-Encapsulated Transistors 2SD2118 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Coll

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD2118T3 Spec. No. : C847T3 Issued Date : 2007.06.26 Revised Date : Page No. : 1/5

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