DMOSFET Datasheet | Specifications & PDF Download

+0 1 ) General Description： HM16N60F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce t

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+0 1 ) General Description： HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce t

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Product Summary Green ZVP2120G SOT223 P-CHANNEL ENHANCEMENT MODE VERTICADLMDNM2O0S2F7ET USS Features and Benefits BVDSS -200V RDS(on) 25Ω @ VGS

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HM8N100F General Description： HM8N100F , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce

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HM1 ) General Description： VDSS 250 V HM15N25F, the silicon N-channel Enhanced VDMOSFETs, is ID 15 A obtained by the self-aligned planar T

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HM2N65PR General Description： HM2N65PR the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce th

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HM4N70K General Description： HM4N70K the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the

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PRELIMINARY DATA SHEET Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT µPD5702TU 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9

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BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features  BVDSS > 200V  RDS(ON) ≤ 23Ω @ VGS= 2.6V  ID = 120mA Maximum Continuous Drain Cur

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HM640  General Description： HM640, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology wh

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HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce th

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HM6N70/F General Description： HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce th

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HM10N80A General Description： VDSS 800 HM10N80A, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technol

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