Texas Instruments
TMS320DM6467T - Digital Media System-on-Chip DMSoC
TMS320DM6467T
www.ti.com
SPRS605C – JULY 2009 – REVISED JUNE 2012
TMS320DM6467T Digital Media System-on-Chip
Check for Samples: TMS320DM6467T
1 Dig
(20 views)
Fairchild Semiconductor
FDMS8320L - MOSFET
FDMS8320L N-Channel PowerTrench® MOSFET
March 2016
FDMS8320L
N-Channel PowerTrench® MOSFET
40 V, 248 A, 1.1 mΩ
Features
Max rDS(on) = 1.1 mΩ at V
(18 views)
ON Semiconductor
FDMS86200 - N-Channel MOSFET
MOSFET – N-Channel, Shielded Gate, POWERTRENCH)
150 V, 35 A, 18 mW
FDMS86200
General Description This N−Channel MOSFET is produced using onsemi’s adv
(15 views)
Fairchild Semiconductor
FDMS86520L - N-Channel MOSFET
FDMS86520L N-Channel PowerTrench® MOSFET
FDMS86520L
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ
October 2014
Features
General Description
(14 views)
Fairchild Semiconductor
FDMS3620S - MOSFET
FDMS3620S PowerTrench® PowerStage
July 2012
FDMS3620S
PowerTrench® PowerStage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rD
(12 views)
ON Semiconductor
FDMS86200DC - N-Channel MOSFET
MOSFET POWERTRENCH), N-Channel, DUAL COOL), Shielded Gate
150 V, 40 A, 17mW
FDMS86200DC
General Description This N−Channel MOSFET is produced using o
(12 views)
ON Semiconductor
FDMS7620S - Dual N-Channel MOSFET
FDMS7620S Dual N-Channel PowerTrench® MOSFET
FDMS7620S
Dual N-Channel PowerTrench® MOSFET
Q1: 30 V, 13 A, 20.0 mΩ Q2: 30 V, 22 A, 11.2 mΩ
Features
Q
(12 views)
Fairchild Semiconductor
FDMS86202 - MOSFET
FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET
July 2014
FDMS86202
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 64 A, 7.2 mΩ
Features
(11 views)
Fairchild Semiconductor
FDMS9620S - 30V Dual N-Channel PowerTrench MOSFET
FDMS9620S Dual N-Channel PowerTrench® MOSFET
May 2014
FDMS9620S
Dual N-Channel PowerTrench® MOSFET
Q1: 30V, 16A, 21.5m: Q2: 30V, 18A, 13m:
Features
(11 views)
Fairchild Semiconductor
FDMS86200 - N-Channel MOSFET
FDMS86200 N-Channel Power Trench® MOSFET
November 2012
FDMS86200
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at
(11 views)
Fairchild Semiconductor
FDMS86520 - N-Channel MOSFET
FDMS86520 N-Channel PowerTrench® MOSFET
FDMS86520
N-Channel PowerTrench® MOSFET
60 V, 42 A, 7.4 mΩ
Features
Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID
(11 views)
Fairchild Semiconductor
FDMS8320LDC - N-Channel Dual Cool Power Trench MOSFET
FDMS8320LDC N-Channel Dual CoolTM Power Trench® MOSFET
October 2012
FDMS8320LDC
N-Channel Dual CoolTM Power Trench® MOSFET
40 V, 130 A, 1.1 mΩ
Fea
(11 views)
ON Semiconductor
FDMS8320LDC - N-Channel MOSFET
DATA SHEET www.onsemi.com
MOSFET – N-Channel, DUAL COOL) DFN8, POWERTRENCH)
40 V, 192 A, 1.1 mW
FDMS8320LDC
Features
• Max RDS(on) = 1.1 mW at VGS =
(11 views)
Central Semiconductor
CDMSJ22010-650 - N-CHANNEL SUPER JUNCTION MOSFET
CDMSJ22010-650 N-CHANNEL
SUPER JUNCTION MOSFET 10 AMP, 650 VOLT
TO-220FP CASE APPLICATIONS: • Power Factor Correction • TV Power • UPS • PD Charger •
(11 views)
Fairchild Semiconductor
FDMS8020 - MOSFET
FDMS8020 N-Channel PowerTrench® MOSFET
FDMS8020
N-Channel PowerTrench® MOSFET
30 V, 131 A, 2.5 mΩ
Features
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID =
(10 views)
HANTRONIX
HDMs64gs20 - LCD DISPLAY MODULE
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PRODUCT SPECIFICATION
HDM64GS20
640x200 GRAPHICS LCD DISPLAY MODULE
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(10 views)
Diodes
DMS2220LFDB - P-Channel MOSFET
DMS2220LFDB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER
Features
Low On-Resistance 95m @VGS = -4.5V 120m @V
(9 views)
Fairchild Semiconductor
FDMS86200DC - MOSFET
FDMS86200DC N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET
July 2015
FDMS86200DC
N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOS
(9 views)
Fairchild Semiconductor
FDMS86201 - N-Channel MOSFET
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86201
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 49 A, 11.5 mΩ
Featu
(9 views)
Fairchild Semiconductor
FDMS8820 - N-Channel PowerTrench MOSFET
FDMS8820 N-Channel PowerTrench® MOSFET
FDMS8820
N-Channel PowerTrench® MOSFET
30 V, 160 A, 2.0 mΩ
Features
Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID =
(9 views)