Elite Semiconductor Memory Tec Datasheet | Specifications & PDF Download

ESMT PSRAM www.DataSheet4U.com M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6 V • Typical active current: 2 mA @ f

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ESMT PSRAM Features • Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1

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ESMT Features z 16/18/20/24-bit input with I S data format z PSNR & DR (A-weighting) Loudspeaker: 98dB (PSNR), 106dB (DR) Headphone: 87dB (PSNR), 96dB

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ESMT Features z 16/18/20/24-bit input with I S, Left-alignment and Right-alignment data format z PSNR & DR(A-weighting) Loudspeaker: 93dB (PSNR), 98dB

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www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr. 2006) - Original M13S2561616A Revision 1.0 (07 Jun. 2006) - Delete Preliminary at e

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ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 1 mA @ f

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www.DataSheet4U.com ESMT DDR SDRAM Features z z z z z z z z z z z z z z z z z z z M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM JEDEC S

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ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T

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ESMT PSRAM www.DataSheet4U.com M24L48512DA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55

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ESMT Preliminary AD8258A Stereo/Mono Digital Audio Amplifier with Headphone Driver and SubWoofer Line-Out Features z 16/18/20/24-bit input with I S

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ESMT M13S128168A (2S) DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per cloc

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www.DataSheet4U.com ESMT DDR SDRAM Features z z z z z z z z z z z z z z z z z z z z z M13S256328A 2M x 32 Bit x 4 Banks Double Data Rate SDRAM JEDE

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ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161ZA Elite Semiconductor Memory Technology Inc. Publicat

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ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1

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ESMT Features z 16/18/20/24-bit input with I S data format z PSNR & DR (A-weighting) Loudspeaker: 98dB (PSNR), 102dB (DR) Headphone: 87dB (PSNR), 96dB

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ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.3V •Typical active current: 1 mA @ f = 1

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ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f

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ESMT PSRAM Features ‧Advanced low-power architecture • High speed: 55 ns, 70 ns • Wide voltage range: 2.7V to 3.6V • Typical active current: 2 mA @ f

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