FLAT TYPE METAL CLAD WIRE-WOUND Resistors GH Serie.
Cree
4
CGH40010 - RF Power GaN HEMT
PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.
Futaba Electric
4
GH400 - (GH Series) Flat Type Metal Clad Wire-Wound Resistors
FLAT TYPE METAL CLAD WIRE-WOUND Resistors GH Series (GH ) FEATURESFEATURES gHigh power rating, and ultra precision. gStandard winding & non-inductiv.
Cree
3
CGH40045 - GaN HEMT
PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.
GOTREND
3
GBD160808PGH400N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
Cree
3
CGH40025 - RF Power GaN HEMT
CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat.
Cree
2
CGH40025F - GaN HEMT
PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH.
Cree
2
CGH40006P - RF Power GaN HEMT
CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, oper.
CREE
1
CGH40035F - RF Power GaN HEMT
CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, ope.
GOTREND
1
GBD201209PGH400N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
Cree
1
CGH40006S - RF Power GaN HEMT
CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.
Wolfspeed
1
CGH40090PP - RF Power GaN HEMT
CGH40090PP 90 W, RF Power GaN HEMT Description Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The .
Wolfspeed
1
CGH40006S - RF Power GaN HEMT
CGH40006S 6 W, RF Power GaN HEMT, Plastic Description Wolfspeed’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (.
Wolfspeed
1
CGH40006P - RF Power GaN HEMT
CGH40006P 6 W, RF Power GaN HEMT Description Wolfspeed’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th.
Wolfspeed
1
CGH40010 - RF Power GaN HEMT
CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description Wolfspeed’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor.
MACOM
1
CGH40045 - DC-4GHz RF Power GaN HEMT
CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). T.
MACOM
1
CGH40025 - RF Power GaN HEMT
CGH40025 25 W, RF Power GaN HEMT Description The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4002.
MACOM
1
CGH40006P - RF Power GaN HEMT
CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.