GH400 Datasheet | Specifications & PDF Download

CGH40010 - RF Power GaN HEMT

CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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CGH40025 - RF Power GaN HEMT

CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat

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CGH40045 - DC-4GHz RF Power GaN HEMT

CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). T

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CGH40025 - RF Power GaN HEMT

CGH40025 25 W, RF Power GaN HEMT Description The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4002

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CGH40006P - RF Power GaN HEMT

CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

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CGH40035F - RF Power GaN HEMT

CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Description The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGH40006S - RF Power GaN HEMT

CGH40006S 6 W, RF Power GaN HEMT, Plastic Description The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). T

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CGH40006P - RF Power GaN HEMT

CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, oper

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Futaba Electric

GH400 - (GH Series) Flat Type Metal Clad Wire-Wound Resistors

FLAT TYPE METAL CLAD WIRE-WOUND Resistors GH Series (GH ) FEATURESFEATURES gHigh power rating, and ultra precision. gStandard winding & non-inductiv

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GOTREND

GBD201209PGH400N - Multilayer Ferrite Chip Bead

Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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CGH40010 - RF Power GaN HEMT

PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

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CGH40045 - GaN HEMT

PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

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CGH40006S - RF Power GaN HEMT

CGH40006S 6 W, RF Power GaN HEMT, Plastic Description Wolfspeed’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (

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CGH40006P - RF Power GaN HEMT

CGH40006P 6 W, RF Power GaN HEMT Description Wolfspeed’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th

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CGH40010 - RF Power GaN HEMT

CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description Wolfspeed’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor

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CGH40025F - GaN HEMT

PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH

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CREE

CGH40035F - RF Power GaN HEMT

CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, ope

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CGH40006S - RF Power GaN HEMT

CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

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