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GaN Systems

GaN Systems DataSheet

GaN Systems

GS66516T - Top cooled 650V enhancement mode GaN transistor

 · 12 Hits • 650 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaN...
GaN Systems

GS66508P - Bottom-side cooled 650V E-mode GaN transistor

 · 9 Hits • 650 V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology® die • ...
GaN Systems

GS-065-004-1-L - 650V E-mode GaN transistor

 · 9 Hits • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 450 mΩ • ID...
GaN Systems

GS-065-030-6-LL - 700V E-mode GaN transistor

 · 8 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, TOLL package • RDS(on) = 40 mΩ • IDS,max = 40 A /...
GaN Systems

GS-065-004-6-L - 700V E-mode GaN transistor

 · 8 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 315 mΩ • ID...
GaN Systems

GS-065-014-6-LR - 700V E-mode GaN transistor

 · 8 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 8x8 mm PDFN package • RDS(on) = 95 mΩ • IDS...
GaN Systems

GS66504B - 650V enhancement mode GaN transistor

 · 7 Hits • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 100 mΩ • IDS(max) = 15 A • Ultra-low FOM die • Low inductance...
GaN Systems

GS61008P - 100V enhancement mode GaN transistor

 · 7 Hits • 100 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance G...
GaN Systems

GS-065-011-6-LR - 700V E-mode GaN transistor

 · 7 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ • IDSmax,D...
GaN Systems

GS66516B - Bottom-side cooled 650V E-mode GaN transistor

 · 7 Hits • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance ...
GaN Systems

GS-065-014-6-L - 700V E-mode GaN transistor

 · 7 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 95 mΩ • IDS...
GaN Systems

GS-065-018-2-L - 650V E-mode GaN transistor

 · 7 Hits • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 78 mΩ • IDSmax,DC...
GaN Systems

GS66508T - Top cooled 650V enhancement mode GaN transistor

 · 6 Hits • 650 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM die • Low inductance GaN...
GaN Systems

GS-065-030-2-L - 650V E-mode GaN transistor

 · 6 Hits • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 50 mΩ • IDS,max =...
GaN Systems

GS-065-030-6-LR - 700V E-mode GaN transistor

 · 6 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ • IDS,max =...
GaN Systems

GS-065-060-5-B-A - Automotive 650V GaN E-mode transistor

 · 6 Hits • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Bottom-cooled, low inductance GaNPX® package • RDS(on) = 25 ...
GaN Systems

GS-065-060-5-T-A - Automotive 650V GaN E-mode transistor

 · 6 Hits • AEC-Q101 and AutoQual+™ (Enhanced-AEC-Q101) • 650 V enhancement mode power transistor • Top-cooled, low inductance GaNPX® package • RDS(on) = 25 mΩ ...
GaN Systems

GS-065-011-2-L - 650V E-mode GaN transistor

 · 6 Hits • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • IDS,max =...
GaN Systems

GS-065-008-6-L - 700V E-mode GaN transistor

 · 6 Hits • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 165 mΩ • ID...
GaN Systems

GS-065-011-1-L - 650V E-mode GaN transistor

 · 6 Hits • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 150 mΩ • ID...
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