SFD2006T (HiSemicon)
60A 20V N-CHANNEL MOSFET
60A, 20V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD2006T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg
(3 views)
SC3D02065A (HiSemicon)
Silicon Carbide Schottky Barrier Diode
ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet
SC3D50065H Silicon Carbide Schottky Barrier Diode
Features
Applications
VRRM=650V IF(TC=135℃ )=5
(3 views)
SFS6010T2 (HiSemicon)
60V 7A Dual N-CHANNEL POWER MOSFET
60V, 7A Dual N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SFS6010T2 uses advanced trench technology and design to provide excellent RDS(on) with low
(3 views)
SFS3400 (HiSemicon)
30V 5.8A N-Channel Power MOSFET
30V,5.8A N-Channel Power MOSFET
GENERAL DESCRIPTION
The SFS3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper
(3 views)
SGP105R5T (HiSemicon)
105V 120A N-CHANNEL POWER MOSFET
105V, 120A N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SGP105R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate
(2 views)
SFD7N65E (HiSemicon)
7A 650V N-CHANNEL MOSFET
7A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet
(2 views)
SGP154R0T (HiSemicon)
150V 200A N-CHANNEL POWER MOSFET
150V, 200A N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SGP154R0Tuses advanced SGT technology and design to provide excellent RDS(on) with low gate
(2 views)
SFD3010T (HiSemicon)
100A 30V N-CHANNEL MOSFET
100A, 30V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD3010T uses advanced trench technology and design to provide excellent RDS(ON) with low gate char
(2 views)
SFD6003PT (HiSemicon)
-30A -60V P-CHANNEL MOSFET
-30A, -60V P-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD6003PT uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch
(2 views)
SCX60R190C (HiSemicon)
600V N-CHANNEL MOSFET
SCX60R190C
600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The Power MOSFET is fabricated using advanced super junction technology. The resulting device ha
(2 views)
SFN3006PT (HiSemicon)
-30V -60A P-CHANNEL POWER MOSFET
-30V, -60A P-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SFN3006PT use advanced trench technology and design to provide excellent RDS(on) with low ga
(2 views)
SFD4004PT (HiSemicon)
-40A -40V P-CHANNEL MOSFET
-40A, -40V P-CHANNELMOSFET
GENERAL DESCRIPTION The SFD4004PT uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha
(2 views)
SFD4006T (HiSemicon)
40V 60A N-CHANNEL POWER MOSFET
40V,60A N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SFD4006T uses advanced trench technology and design to provide excellent RDS(on) with low gate
(2 views)
SFN0330T2 (HiSemicon)
30V 30A DUAL N-CHANNEL POWER MOSFET
30V, 30A DUAL N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SFN0330T2 uses advanced trench technology and design to provide excellent RDS(on) with lo
(2 views)
SFN3009T (HiSemicon)
30V 90A N-CHANNEL POWER MOSFET
30V, 90A N-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SFN3009T uses advanced Trench technology and design to provide excellent RDS(on) with low gate
(2 views)
SFS0405T4 (HiSemicon)
N and P-CHANNEL POWER MOSFET
N and P-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SFS0405T4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate c
(2 views)
SFX3009PT (HiSemicon)
30V 90A P-CHANNEL POWER MOSFET
30V, 90A P-CHANNEL POWER MOSFET
GENERAL DESCRIPTION
The SFX3009PT uses advanced trench technology and design to provide excellent RDS(on) with low gat
(2 views)
SFD3015T (HiSemicon)
150A 30V N-CHANNEL MOSFET
150A,30V N-CHANNEL MOSFET
GENERAL DESCRIPTION
The SFD3015T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg
(2 views)
