HiSemicon Datasheet | Specifications & PDF Download

7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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30A, 20V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD2003T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg

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20V, 13A DUAL N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN0213T2 uses advanced trench technology and design to provide excellent RDS(on) with lo

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-7A,-15V P-Channel Power MOSFET GENERAL DESCRIPTION The Power MOSFET has extremely low on resistance, making it especially suitable for applications w

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100V, 120A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGX105R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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30V, 100A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3010PT uses advanced trench technology and design to provide excellent RDS(on) with low ga

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7A, 300V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s pr

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SCX70R360C6 700V N-Channel Super Junction Power MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. Th

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-40V, -8A P-Channel Power MOSFET GENERAL DESCRIPTION The Power MOSFET has extremely low on resistance, making it especially suitable for applications

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100V 15A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGX15N10 uses advanced SGT technology and design to provide excellent RDS(on) with low gate ch

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N AND P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS0407T4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate c

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-30V, -25A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFN3002PT5 use advanced trench technology and design to provide excellent RDS(on) with low g

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-5A,-15V P-Channel Power MOSFET GENERAL DESCRIPTION The Power MOSFET has extremely low on resistance, making it especially suitable for applications w

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-4.8A, -20V P-Channel Power MOSFET GENERAL DESCRIPTION The Power MOSFET has extremely low on resistance, making it especially suitable for application

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40V, 100A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGM042R8T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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N-Ch and P-Ch Power MOSFET GENERAL DESCRIPTION Complementary Enhancement MOSFET in a TO-252-4L Package. The SFQ0320T4 uses advanced trench technology

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

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40V, 8A Dual N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFS4008T2 uses advanced trench technology and design to provide excellent RDS(on) with

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80A,20VN-CHANNELMOSFET SFD2008T GENERAL DESCRIPTION The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON

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1200V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆1200V Schottky rectifier ◆Zero Forward/Reverse Recovery Current ◆High Blocking Voltage ◆High

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