.
IXYS Corporation
L468 - Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM
Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM DSEE 55-24N1F VRRM = 2400 V IF(AV)M = 55 A trr = 220 ns 1 3 1.
IXYS Corporation
IXFL34N100 - HiPerFET Power MOSFET ISOPLUS264
HiPerFETTM Power MOSFET ISOPLUS264TM (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low.
IXYS Corporation
L532 - IGBT phaseleg in ISOPLUS i4-PAC
FII 30-06D IGBT phaseleg in ISOPLUS i4-PACTM IC25 = 30 A = 600 V VCES VCE(sat) typ. = 1.9 V 3 5 4 Preliminary data 1 1 2 5 IGBTs Symbol VCES VGE.
IXYS Corporation
IXUC200N055 - Trench Power MOSFET ISOPLUS220
ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5.
IXYS Corporation
DSEA16-06BC - (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM V 600 600 VRRM V 600 6.
IXYS Corporation
IXFC26N50 - (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High.
IXYS Corporation
IXFC60N20 - HiPerFET MOSFET ISOPLUS220TM
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High .
IXYS Corporation
IXFC80N085 - (IXFC80N08 / IXFC80N085) HIPERFET-TM MOSFET ISOPLUS220-TM
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High .
IXYS Corporation
IXFC96N15P - PolarHT HiPerFET Power MOSFET ISOPLUS220
www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 96N15P VDSS = 150 V ID25 = 42 A RDS(on) .
IXYS Corporation
IXGR35N120B - (IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247
www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE(sat) tfi(typ) 160 ns 115 ns IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 7.
IXYS Corporation
IXGR35N120C - (IXGR35N120B/C) HiPerFAST IGBT ISOPLUS247
www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE(sat) tfi(typ) 160 ns 115 ns IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 7.
IXYS Corporation
IXGR50N60B - HiPerFAST IGBT ISOPLUS247
www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ) = 600 .
IXYS
IXGC16N60C2 - HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case
IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Preliminary Data Sheet D.
IXYS
IXGC16N60C2D1 - HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case
IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Preliminary Data Sheet D.
IXYS Corporation
IXFL60N80P - PolarHV HiPerFET Power MOSFET ISOPLUS264
PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 60N80P VDSS ID25 = 800 V = 40 A RDS(on) ≤ 150 mΩ ≤ 250 ns tr.
IXYS Corporation
IXFC13N50 - HiPerFET MOSFET ISOPLUS220
ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMO.
IXYS Corporation
IXUC120N10 - Trench Power MOSFET ISOPLUS220
ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9..
IXYS Corporation
DSEA16-06AC - (DSEA16-06AC / DSEC16-06AC) HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM
www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface DSEA IFAV VRRM trr.
IXYS Corporation
DSEC16-06BC - (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM V 600 600 VRRM V 600 6.
IXYS Corporation
FII30-12D - Fast IGBT Chopper in ISOPLUS i4-PACTM
www.DataSheet4U.com Advanced Technical Information Fast IGBT Chopper in ISOPLUS i4-PACTM FII 30-12D IC25 VCES VCE(sat) typ. = 30 A = 1200 V = 2.3 .