ISOPLUS Datasheet | Specifications & PDF Download

www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE(sat) tfi(typ) 160 ns 115 ns IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 7

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PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 60N80P VDSS ID25 = 800 V = 40 A RDS(on) ≤ 150 mΩ ≤ 250 ns tr

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Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode in ISOPLUS i4-PACTM DSEE 55-24N1F VRRM = 2400 V IF(AV)M = 55 A trr = 220 ns 1 3 1

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ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9.

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ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5

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www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM V 600 600 VRRM V 600 6

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www.DataSheet4U.com Advanced Technical Information Fast IGBT Chopper in ISOPLUS i4-PACTM FII 30-12D IC25 VCES VCE(sat) typ. = 30 A = 1200 V = 2.3

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 96N15P VDSS = 150 V ID25 = 42 A RDS(on)

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www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE(sat) tfi(typ) 160 ns 115 ns IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 7

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www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ) = 600

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www.DataSheet4U.com HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 50N60B IXGR 50N60BD1 IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ) = 600

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HiPerFETTM Power MOSFET ISOPLUS264TM (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low

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HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t

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Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 12N80P VDSS ID25 RDS(on) trr

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface DSEA IFAV VRRM trr

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High

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