Isahaya Datasheet | Specifications & PDF Download

ISAHAYA ELECTRONICS CORPORATION Free Free Datasheet Datasheet http://www.datasheet-pdf.com/ http://www.Datasheet4U.com ISAHAYA ELECTRONICS CORPORATIO

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PRELIMINARY RT3TFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TFFM is compound transistor b

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ＲＴ１Ｎ４４１Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N441X is a one chip transi

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION

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RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K33M is a composite transistor built with two INK0003AX

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RT5N234S Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT5N234S is a one chip transistor with built-in bi

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DESCRIPITON VLA218-241236 is a non-isolated type DC-DC converter. HYBRID IC VLA218-241236 NON-ISOLATED TYPE DC-DC CONVERTER OUTLINE DRAWING Dimensi

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RT1N432X SERIES DESCRIPTION RT1N432X is a one chip transistor with built-in bias resistor,PNP type is RT1P432X. FEATURE ・Built-in bias resistor (R1=4.

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www.DataSheet4U.com ISAHAYA ELECTRONICS CORPORATION www.DataSheet4U.com ISAHAYA ELECTRONICS CORPORATION www.DataSheet4U.com ISAHAYA ELECTRONICS C

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〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 www.DataSheet4U.com FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION IS

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〈SMALL-SIGNAL TRANSISTOR〉 ISA1530AC1 ISA1603AM1 www.DataSheet4U.com . FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION

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Y RT3NFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3NFFM is a composite transistor built wi

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DESCRIPTION VLA542 is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate-amplifier application. This device operates

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46#  6 46#  ٨ ٨ 8%' UCV  8OCZ +% O#‫ޔ‬+$ O#

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www.DataSheet4U.com DESCRIPTION 2SC5383 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency

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DESCRIPTION VLA546 is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate-amplifier application. This device operates

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DESCRIPTION VLA500-02R is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate-amplifier application. This device inclu

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PRELIMINARY HYBRID IC VLA129-2400GTR ISOLATED TYPE DC-DC CONVERTER DESCRIPTION  The VLA129‐2400GTR is a DC‐DC converter for IGBT gate drive.  Outpu

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DIP-GAM VLA585-01R PRELIMINARY ＜Dual-In-Line Package Gate Amp Module＞ VLA585-01R DRIVER FOR IGBT MODULES FEATURES -Low height, DIP structure -Isola

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DESCRIPTION VLA567-01R is the hybrid integrated circuit of 2ch IGBT drivers. This device include the isolated type DC-DC converter for Gate drive. The

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