TG-59 Datasheet | Specifications & PDF Download

Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2597-SM 2 - 6 GHz GaN Driver Amplifier Product Features •

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Applications  Electronic Warfare  Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 1

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TGA2595 27.5 – 31 GHz 9 W GaN Power Amplifier Product Description Qorvo’s TGA2595 is a balanced Ka-band power amplifier fabricated on Qorvo’s 0.15 um

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TGA2595 27.5 – 31 GHz 9 W GaN Power Amplifier Product Description Qorvo’s TGA2595 is a balanced Ka-band power amplifier fabricated on Qorvo’s 0.15 um

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C FEATURES TIGER ELECTRONIC CO.,LTD 1N4728 THRU 1N4764 1W SILICON PLANAR ZENER DIODES . Silicon planar power zener diodes For use in stabilizing and

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Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2597 2-6 GHz GaN Driver Amplifier Product Features • Freq

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto

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ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Mo

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MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 13.5dB at Pi

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TGA2594-HM 27 – 31 GHz GaN Power Amplifier Product Description Qorvo’s TGA2594-HM is a packaged power amplifier fabricated on Qorvo’s 0.15 um GaN on

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Applications  Commercial and military radar  Communications  Electronic Warfare (EW) TGA2598 6 – 12GHz 2W GaN Driver Amplifier Product Features 

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Applications • C-Band Radar • Communications TGA2599-SM 5.0-8.0 GHz GaN Driver Amplifier Product Features • Frequency Range: 5.0-8.0 GHz • Small Sig

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Applications  Electronic Warfare  Commercial and Military Radar TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Product Features  Frequency Range:

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto

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ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.0dB at Pin=

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TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6590FTG Dual DC Motor Driver TB6590FTG The TB6590FTG is a dual DC motor driver IC using LDMOS o

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® General Description Qorvo's TGA2597 is a driver amplifier fabricated on Qorvo's QGAN25 0.25 um GaN on SiC production process. The TGA2597 operates f

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