VCE Datasheet | Specifications & PDF Download

VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbo

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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V IC25 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Ca

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Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I

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High Voltage, Low VCE(sat) IGBT Short Circuit SOA Capability IXSH 45N120 VCES IC25 VCE(sat) = 1200 V = 75 A = 3V Symbol VCES VCGR VGES VGEM IC25 I

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Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V

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www.DataSheet.co.kr CTLT3820-M563 SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL

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www.DataSheet4U.com NSS12200LT1G 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mini

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Ultra-Low VCE(sat) IGBT IXGH 31N60 IXGT 31N60 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 I

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi

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VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbo

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Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0

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Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0

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GP401DDM18 GP401DDM18 Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information DS5397-1.2 January 2001 FEATURES s s s s s Low VCE(SA

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Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Ca

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Low VCE(sat) IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 VCE(sat) 3.2 V 3.8 V 1200 V 30 A 1200 V

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Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I

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NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount de

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A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E ( s a t ) TRANSISTOR IN SO T-23 Features • • • • • • • • • • • BVCEO > 25V BVCBO > 35

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