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PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-w.PTVA123501EC - Thermally-Enhanced High Power RF LDMOS FETs
PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDM.PTVA123501FC - Thermally-Enhanced High Power RF LDMOS FETs
PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDM.PXAC192908FV - Thermally-Enhanced High Power RF LDMOS FET
PXAC192908FV Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1930 – 1995 MHz Description The PXAC192908FV is a 240-watt LDMOS FET with an as.PXAC203302FV - Thermally-Enhanced High Power RF LDMOS FET
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz Description The PXAC203302FV is a 330-watt LDMOS FET with an as.WGC22630 - Thermally Enhanced GaN Amplifier
Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz Features • GaN on SiC HEMT Technology • Pulsed CW Performance: 2155 MHz, 48 V, 40 µs Pu.PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-w.PTFB211803EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-w.PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-.PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-.PTAC260302FC - Thermally-Enhanced High Power RF LDMOS FET
PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for.PXAC201602FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDM.PXAC241702FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymm.PXAC260602FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with.PTRA093302FC - Thermally-Enhanced High Power RF LDMOS FET
PTRA093302FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 330 W, 50 V, 746 – 768 MHz Description The PTRA0.PXAC261002FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an a.PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-w.PXAC180602MD - Thermally-Enhanced High Power RF LDMOS FET
PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET 60 W, 28 V, 1805 – 1880 MHz Description The PXAC180602MD is a 60-watt LDMOS FET with an asym.PXAC182002FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PXAC182002FC is a 180-watt LDMOS FET with an as.