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FDMS86263P MOSFET

FDMS86263P Description

FDMS86263P P-Channel PowerTrench® MOSFET FDMS86263P P-Channel PowerTrench® MOSFET -150 V, -22 A, 53 mΩ .
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.

FDMS86263P Features

* Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
* Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
* Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg

FDMS86263P Applications

* as well as load switch applications
* 100% UIL tested

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Fairchild Semiconductor FDMS86263P-like datasheet