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2SD1162 - Silicon NPN Darlington Power Transistor

2SD1162 Description

isc Silicon NPN Darlington Power Transistor 2SD1162 .
High DC Current Gain- : hFE= 400(Min. High Switching Speed. Low Collector Saturation Voltage. Minimum Lot-to-Lot variations.

2SD1162 Applications

* Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Base C

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Datasheet Details

Part number
2SD1162
Manufacturer
Inchange Semiconductor
File Size
214.38 KB
Datasheet
2SD1162_InchangeSemiconductor.pdf
Description
Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1162-like datasheet