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IRGP6630DPbF Insulated Gate Bipolar Transistor

IRGP6630DPbF Description

  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC .

IRGP6630DPbF Applications

*  Welding

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