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IRGP6690DPbF Insulated Gate Bipolar Transistor

IRGP6690DPbF Description

VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.= 1.65V @ IC = 75A Applications * Welding * H Bridge Converter.

IRGP6690DPbF Applications

* Welding

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