Datasheet Details
- Part number
- GT50MR21
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 213.98 KB
- Datasheet
- GT50MR21-ToshibaSemiconductor.pdf
- Description
- silicon N-channel IGBT
GT50MR21 Description
GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Applications The p.GT50MR21 Features
* (1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ. ) (IC = 50 A) FWD : trr = 0.45 µs (typ. ) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC =
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