UF3C170400K3S Datasheet - UnitedSiC

UF3C170400K3S MOSFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C170400K3S Features

* w Typical on-resistance RDS(on),typ of 410mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modul

UF3C170400K3S Datasheet (361.82 KB)