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No	Part Number	Description	Manufacture	PDF
15	FDT1600N10ALZ	MOSFET FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A •	Fairchild Semiconductor
14	FDT3612	100V N-Channel PowerTrench MOSFET FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using e	Fairchild Semiconductor
13	FDT3N40	MOSFET FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Ty	Fairchild Semiconductor
12	FDT434P	P-Channel 2.5V Specified PowerTrench MOSFET FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrenc	Fairchild Semiconductor
11	FDT439N	N-Channel 2.5V Specified EnhancementMode Field Effect Transistor FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Se	Fairchild Semiconductor
10	FDT457N	N-Channel Enhancement Mode Field Effect Transistor August 1998 FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,	Fairchild Semiconductor
9	FDT458P	30V P-Channel PowerTrench MOSFET FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using eith	Fairchild Semiconductor
8	FDT459N	N-Channel Enhancement Mode Field Effect Transistor March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, h	Fairchild Semiconductor
7	FDT461N	N-Channel Logic Level PowerTrench MOSFET FDT461N April 2004 FDT461N N-Channel Logic Level PowerTrench® MOSFET 100V, 0.4A, 2.5Ω Features • rDS(ON) = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Qg(tot) = 2.36nC (Typ.), VGS = 10V • Low M	Fairchild Semiconductor
6	FDT86102LZ	MOSFET FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A Max rDS(on) = 38	Fairchild Semiconductor
5	FDT86106LZ	MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013 Max rDS(on) = 108 mΩ at VGS = 10 V, ID =	Fairchild Semiconductor
4	FDT86113LZ	MOSFET FDT86113LZ N-Channel PowerTrench® MOSFET March 2011 FDT86113LZ N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m: Features General Description Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A	Fairchild Semiconductor

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