FDT Datasheet | Specifications & PDF Download

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) D 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced

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SMD Type N-Channel Enhancement MOSFET FDT86244 MOSFET ■ Features ● VDS (V) = 150V ● ID = 2.8 A (VGS = 10V) ● RDS(ON) ＜ 285mΩ (VGS = 10V) ● RDS(ON)

Rating: 1 ★ (7 votes)

MOSFET – N-Channel, POWERTRENCH) 150 V, 2 A, 228 mW FDT86246L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTREN

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MOSFET – N-Channel, POWERTRENCH) 100 V FDT3612 General Description This N−Channel MOSFET has been designed specifically to improve the overall effici

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FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ a

Rating: 1 ★ (6 votes)

FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013

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FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.8 A, 128 mΩ Feature

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MOSFET - Power, N-Channel, UniFETt II, Ultra FRFETt 500 V, 2 A, 3 W FDT4N50NZU Description UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET

Rating: 1 ★ (6 votes)

FDT434P FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using ON Semic

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FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ M

Rating: 1 ★ (5 votes)

FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features „ Max rDS(on) = 845 mΩ at VGS = 10 V, ID

Rating: 1 ★ (5 votes)

FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 1

Rating: 1 ★ (5 votes)

FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using

Rating: 1 ★ (5 votes)

FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Lo

Rating: 1 ★ (5 votes)

IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop

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TL431 family Adjustable precision shunt regulators Rev. 7 — 30 April 2024 Product data sheet 1. General description Three-terminal shunt regulator

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TL431 family Adjustable precision shunt regulators Rev. 7 — 30 April 2024 Product data sheet 1. General description Three-terminal shunt regulator

Rating: 1 ★ (5 votes)

Transistor, N-Channel, Field Effect, Enhancement Mode FDT457N General Description These N−Channel enhancement mode power field effect transistors are

Rating: 1 ★ (5 votes)

MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2 A, 236 mW FDT86246 Description This N−Channel MOSFET is produced using Fairchild onsemi advanc

Rating: 1 ★ (5 votes)

MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s adv

Rating: 1 ★ (5 votes)