FDT Datasheet | Specifications & PDF Download

FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Lo

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FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features „ Max rDS(on) = 845 mΩ at VGS = 10 V, ID

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www.DataSheet4U.com HONDA THE WORLD FAMOUS CONNECTORS PRODUCTS GUIDE '99 0.8mm PITCH CONNECTORS DataSheet4U.com DataShee HDRA Series - This is

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TL431 family Adjustable precision shunt regulators Rev. 7 — 30 April 2024 Product data sheet 1. General description Three-terminal shunt regulator

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IGBT - Field Stop 600 V, 20 A FGH20N60SFDTU, FGH20N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of F

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FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode fiel

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TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E Vishay Semiconductors Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation Des

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IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop

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TL431 family Adjustable precision shunt regulators Rev. 7 — 30 April 2024 Product data sheet 1. General description Three-terminal shunt regulator

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FDT3612 March 2001 FDT3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve th

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FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using

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FDT458P June 2001 FDT458P 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the

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IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs

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MOSFET – N-Channel, POWERTRENCH) 100 V, 3.2 A, 108 mW FDT86106LZ General Description This N−Channel logic Level MOSFETs are produced using onsemi’s a

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MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s adv

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MOSFET – N-Channel, POWERTRENCH) 100 V, 5.6 A, 160 mW FDT1600N10ALZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWE

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FGH20N60SFDTU_F085 — 600 V, 20 A Field Stop IGBT FGH20N60SFDTU_F085 600 V, 20 A Field Stop IGBT Features • High Current Capability • Low Saturation V

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IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBT

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FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features • RDS(on) = 1

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www.DataSheet.co.kr FLAT DISPLAY TECHNOLOGY This product is RoHS compliant ̺ SPECIFICATION APPROVAL SHEET ̺ Fdt Tech Module No LP102V8IBx-FxR 10.2

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