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FDT3N40 N-Channel UniFETTM MOSFET FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features • RDS(on) = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A • Lo

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MOSFET – N-Channel Shielded Gate POWERTRENCH) 150 V, 2 A, 236 mW FDT86246 Description This N−Channel MOSFET is produced using Fairchild onsemi advanc

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FDT86106LZ N-Channel PowerTrench® MOSFET FDT86106LZ N-Channel PowerTrench® MOSFET 100 V, 3.2 A, 108 mΩ Features General Description January 2013

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FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.8 A, 128 mΩ Feature

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FDT434P January 2000 FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using

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SMD Type N-Channel Enhancement MOSFET FDT86244 MOSFET ■ Features ● VDS (V) = 150V ● ID = 2.8 A (VGS = 10V) ● RDS(ON) ＜ 285mΩ (VGS = 10V) ● RDS(ON)

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FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ M

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FDT86256 N-Channel PowerTrench® MOSFET FDT86256 N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ Features „ Max rDS(on) = 845 mΩ at VGS = 10 V, ID

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IGBT - Field Stop 600 V, 20 A FGH20N60SFDTU, FGH20N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of F

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FDT434P FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using ON Semic

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March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transis

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MOSFET – N-Channel, POWERTRENCH) 150 V, 2 A, 228 mW FDT86246L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTREN

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MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s adv

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MOSFET – N-Channel, POWERTRENCH) 100 V, 5.6 A, 160 mW FDT1600N10ALZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWE

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FDT86246L N-Channel PowerTrench® MOSFET February 2016 FDT86246L N-Channel PowerTrench® MOSFET 150 V, 2 A, 228 mΩ Features General Description „ M

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FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ a

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www.DataSheet.co.kr FLAT DISPLAY TECHNOLOGY This product is RoHS compliant ̺ SPECIFICATION APPROVAL SHEET ̺ Fdt Tech Module No LP102V8IBx-FxR 10.2

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Transistor, N-Channel, Field Effect, Enhancement Mode FDT457N General Description These N−Channel enhancement mode power field effect transistors are

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) D 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced

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MOSFET – N-Channel, POWERTRENCH) 100 V FDT3612 General Description This N−Channel MOSFET has been designed specifically to improve the overall effici

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