GaN-HEMT Datasheet | Specifications & PDF Download

PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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Eudyna GaN-HEMT 10W Preliminary FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110

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CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat

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FEATURES ŋINTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN GL= 12.0dB at 9.0GHz to 9.8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULS

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CGHV40180F 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (H

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TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product F

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TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE

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CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The C

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NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S

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GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Description The GTVA263202FC is a 340-watt (P3dB) GaN on S

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MICROWAVE POWER GaN HEMT TGI7785-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 44dBm ŋHIGH GAIN GL= 11.5dB at

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MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 13.5dB at Pi

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CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor

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CGH35030F 30 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX Description Wolfspeed’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (H

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CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele

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CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transist

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CGH27015 15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27015 is a gallium nitride (GaN) high ele

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KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Su

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