GaN-HEMT Datasheet | Specifications & PDF Download

CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description The CGHV35120F is a gallium nitride (GaN) high electron mobility

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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CGHV14800 800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14800 is a gallium nitride (GaN) high electron mo

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GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA1

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE

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CG2H40025 25 W, 28 V RF Power GaN HEMT Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025

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FEATURES ŋINTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN GL= 12.0dB at 9.0GHz to 9.8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULS

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CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

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CGHV1F006S 6 W, DC - 15 GHz, 40 V, GaN HEMT Description Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transisto

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CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele

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CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Description The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobilit

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CGH40025 25 W, RF Power GaN HEMT Description The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4002

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GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 – 2690 MHz Description The GTRB267008FC is a 620-watt (P4dB) GaN on Si

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TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (m

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PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH

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CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, op

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CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high el

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CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2

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TPD3215M—Discontinued PRODUCT SUMMARY (TYPICAL) VDS (V) 600 RDS(on) (m) 30 Features  High frequency operation  Free-wheeling diode not requir

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