GaN-HEMT Datasheet | Specifications & PDF Download

CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

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CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

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advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTV

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CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HEMT Description Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) desi

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GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si

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CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HE

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CLF1G0035-200P; CLF1G0035S-200P Broadband RF power GaN HEMT Rev. 1 — 22 April 2016 Product data sheet 1. Product profile 1.1 General description Th

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MICROWAVE POWER GaN HEMT TGI5059-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 42.0dBm ･HIGH GAIN GL= 13.5dB at

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

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1EDI EiceDRIVER™ Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Data Sheet Rev. 2.0, 2015-06-01 Industrial Power Co

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advance specification GTVA221701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 1805 – 2170 MHz Description The GTV

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CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat

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MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5

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MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at

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CGH40180PP 180 W, RF Power GaN HEMT Description Wolfspeed's CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

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ICPB2002 | Discrete Power GaN HEMT 12 Watt Features • Frequency Range DC-12GHz • 41.5dBm Nominal P3dB • Maximum PAE at 6GHz of 65% • Drain Bias 28V

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ICPB2005 | Discrete Power GaN HEMT 25 Watt Features • Frequency Range DC-12GHz • 44.5dBm Nominal P3dB • Maximum PAE at 6GHz of 65% • Drain Bias 28V

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ICPB1005 | Discrete Power GaN HEMT 25 Watt Features • Frequency Range DC-14GHz • 45.5dBm Nominal P3dB Pulsed • Maximum PAE at 6GHz of 70% • 18dB Li

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