.
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75
2SA1216 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Li.
Inchange Semiconductor
44
2SA1695 - POWER TRANSISTOR
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -.
Inchange Semiconductor
38
A940 - 2SA940
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA940 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO.
Inchange Semiconductor
33
2SA1837 - POWER TRANSISTOR
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1837 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·High Curre.
Inchange Semiconductor
27
2SA1106 - POWER TRANSISTOR
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear.
Inchange Semiconductor
26
2SA1186 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Ty.
Inchange Semiconductor
21
2SA1102 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Minimum Lot-t.
Inchange Semiconductor
20
A1659 - 2SA1659
www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter.
Inchange Semiconductor
18
A1658 - 2SA1658
Inchange Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1658 DESCRIPTION ·With TO-220F package ·Compleme.
Inchange Semiconductor
18
2SA1303 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Ty.
Inchange Semiconductor
15
2SA1011 - POWER TRANSISTOR
sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo.
Inchange Semiconductor
15
2SA1494 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2S.
Inchange Semiconductor
14
2SA1227 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type .
Inchange Semiconductor
13
2SA1305 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1305 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Complement .
Inchange Semiconductor
13
2SA1301 - Silicon PNP Power Transistor
isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complemen.
Inchange Semiconductor
13
2SA1015 - Silicon PNP Power Transistors
` isc Silicon PNP Transistor DESCRIPTION ·High Voltage and High Current Vceo=-50V(Min.），Ic=-150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complemen.
Inchange Semiconductor
12
2SA1008 - POWER TRANSISTOR
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Fa.
Inchange Semiconductor
12
2SA1553 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1553 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V.
Inchange Semiconductor
12
2SA818 - Silicon PNP Power Transistors
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA818 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO.
Inchange Semiconductor
11
2SA1757 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1757 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturati.