ON Semiconductor FDG Datasheet | Specifications & PDF Download

Digital FET, Dual N & P Channel FDG6320C General Description These dual N & P−Channel logic level enhancement mode field effect transistors are prod

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FDG312P February 1999 FDG312P P-Channel 2.5V Specified PowerTrench™ MOSFET General Description This P-Channel MOSFET is produced using Fairchild Sem

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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November 1998 FDG6320C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transist

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March 1999 FDG6323L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic

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MOSFET– P-Channel, Logic Level, POWERTRENCH) FDG316P General Description This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s adva

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FDG327NZ October 2015 FDG327NZ 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improv

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FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairc

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July 1999 FDG6304P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro

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November 1998 FDG6321C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transist

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FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild S

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FDG6342L Integrated Load Switch www.DataSheet4U.com September 2007 FDG6342L Integrated Load Switch Features „ Max rDS(on) = 150mΩ at VGS = 4.5V, ID

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FDG410NZ Single N-Channel PowerTrench® MOSFET FDG410NZ Single N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ March 2009 Features General Descrip

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FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produce

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FDG313N FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's prop

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Digital FET, Dual N & P Channel FDG6321C General Description These dual N & P−Channel logic level enhancement mode field effect transistors are produ

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FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0.4Ω Features „ Max rDS(on) = 0

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FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features „ Max rDS(on) = 95m: at

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FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Sem

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FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a

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