.
ON Semiconductor
9
FDG1024NZ - Dual N-Channel MOSFET
MOSFET – Dual N-Channel, POWERTRENCH® 20 V, 1.2 A, 175 mW FDG1024NZ Description This dual N−Channel logic level enhancement mode field effect transist.
Fairchild Semiconductor
8
FDG313N - N-Channel Digital FET
FDG313N July 2000 FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairc.
Fairchild Semiconductor
7
FDG326P - P-Channel 1.8V Specified PowerTrench MOSFET
FDG326P January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s .
Fairchild Semiconductor
7
FDG6306P - P-Channel 2.5V Specified PowerTrench MOSFET
FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged g.
Fairchild Semiconductor
6
FDG314P - Digital FET/ P-Channel
FDG314P July 2000 FDG314P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistor is produced using Fairc.
Fairchild Semiconductor
6
FDG361N - N-Channel MOSFET
FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced usin.
Fairchild Semiconductor
6
FDG6303N - Dual N-Channel Digital FET
July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro.
Fairchild Semiconductor
5
FDG332PZ - MOSFET
FDG332PZ P-Channel PowerTrench® MOSFET FDG332PZ P-Channel PowerTrench® MOSFET -20V, -2.6A, 97m: December 2008 tm Features Max rDS(on) = 95m: at .
Fairchild Semiconductor
5
FDG6320C - Dual N & P Channel Digital FET
November 1998 FDG6320C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transist.
ON Semiconductor
5
FDG6316P - P-Channel MOSFET
DATA SHEET www.onsemi.com MOSFET– Specified, P-Channel, POWERTRENCH) 1.8 V FDG6316P General Description This P−Channel 1.8 V specified MOSFET uses o.
ON Semiconductor
5
FDG6323L - Integrated Load Switch
FDG6323L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment w.
Fairchild Semiconductor
4
FDG327N - 20V N-Channel PowerTrench MOSFET
FDG327N October 2001 FDG327N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t.
Fairchild Semiconductor
4
FDG328P - P-Channel 2.5V Specified PowerTrench MOSFET
FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a .
Fairchild Semiconductor
4
FDG329N - 20V N-Channel PowerTrench MOSFET
FDG329N October 2001 FDG329N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve t.
Fairchild Semiconductor
4
FDG330P - P-Channel 1.8V Specified PowerTrench MOSFET
FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s.
Fairchild Semiconductor
4
FDG6318P - Dual P-Channel/ Digital FET
FDG6318P January 2003 FDG6318P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced.
Fairchild Semiconductor
4
FDG6318PZ - Dual P-Channel/ Digital FET
FDG6318PZ January 2003 FDG6318PZ Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produc.
Fairchild Semiconductor
4
FDG1024NZ - N-Channel MOSFET
FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features Max rDS(on) = .
ON Semiconductor
4
FDG6306P - P-Channel MOSFET
DATA SHEET www.onsemi.com MOSFET– Specified, P-Channel, POWERTRENCH) 2.5 V FDG6306P General Description This P−Channel 2.5 V specified MOSFET is a r.
ON Semiconductor
4
FDG6303N - Dual N-Channel Digital FET
Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.