PNM6N30V15H (Prisemi)
N-Channel MOSFET
Description
The PNM6N30V15H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as
(6 views)
PNM723T30V01 (Prisemi)
N-Channel MOSFET
Description
PNM723T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistan
(5 views)
PNMT3400 (Prisemi)
N-Channel MOSFET
Description
Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switching
MOSFET Product Summary
VDS(V) 30
(5 views)
PNM8P30V20 (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 30
MOSFET Product Summary
R
(4 views)
PNM3FD20V1EN (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
R
(4 views)
PNM3FD20V1E (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
R
(4 views)
PNMT30V2A (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. Trench Power MV MOSFET technology
(4 views)
PNM3FD20V1ELN (Prisemi)
N-Channel MOSFET
Description
The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge. This device is suitable for power m
(4 views)
PNM8PN30V50A (Prisemi)
N-Channel MOSFET
Description
The PNM8PN30V50A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load
(4 views)
PNM723T703E0-2 (Prisemi)
N-Channel MOSFET
Description
PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resist
(3 views)
PNMT2302 (Prisemi)
N-Channel MOSFET
Description
Trench Power LV MOSFET technology High Power and current handing capability
MOSFET Product Summary
VDS(V) 20
RDS(on)(mΩ) 30@VGS = 4
(3 views)
PNM8PN03R13 (Prisemi)
N-Channel MOSFET
Description
The PNM8PN03R13 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load s
(3 views)
PNM3FD20V2 (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
MOSFET Product Summary
VDS(V) 20
(3 views)
PNM523T201E0 (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
R
(3 views)
PNMT20V2SA (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. Trench Power LV MOSFET technology
(3 views)
PNMT100V2 (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. Trench Power MV MOSFET technology
(3 views)
PNM8PN30V40 (Prisemi)
N-Channel MOSFET
Description
The PNM8PN30V40 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load s
(3 views)
PNMT6N2 (Prisemi)
Transistor
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2 is composed by a transistor and a MOSFET
Transistor:
Very low c
(2 views)
PNM6N20V10E (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
R
(2 views)
PNMET20V06 (Prisemi)
N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.3@
(2 views)
