PNM723T201E0 (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20 ESD
MOSFET Product Summa
(42 views)
PNMT60V02 (Prisemi)
N-Channel MOSFET
PNMT60V02 N-Channel MOSFET
Description
PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density
(32 views)
PNMT6N1 (Prisemi)
Transistor
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N1 is composed by a transistor and a MOSFET
Transistor:
Very low c
(31 views)
PNMT20V6 (Prisemi)
N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
PNMT20V6 N-Channel MOSFET
D（3）
VDS(V) 20
MOSFET Product
(28 views)
PNM3FD20V1EN (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
R
(28 views)
PNM3FD20V2 (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness.
MOSFET Product Summary
VDS(V) 20
(27 views)
PNM6N30V15H (Prisemi)
N-Channel MOSFET
Description
The PNM6N30V15H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as
(27 views)
PNM3FD20V1E (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
R
(27 views)
PNMT6N2B (Prisemi)
Transistor
PNMT6N2B Transistor with N-MOSFET
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2B is composed by a transistor and
(26 views)
PNM8PN30V50A (Prisemi)
N-Channel MOSFET
Description
The PNM8PN30V50A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load
(25 views)
PNM6N30V20MF (Prisemi)
N-Channel MOSFET
Description
The PNM6N30V20MF uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load
(23 views)
PNMT50V02E (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 50
MOSFET Product Summary
R
(22 views)
PNM3FD20V1EMN (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 20
MOSFET Product Summary
R
(22 views)
PNM6N30V12 (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) 30
MOSFET Product Summary
R
(22 views)
PNMT6N2 (Prisemi)
Transistor
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N2 is composed by a transistor and a MOSFET
Transistor:
Very low c
(21 views)
PNM3FD20V1ELN (Prisemi)
N-Channel MOSFET
Description
The PNM3FD20V1ELN uses split gate trench technology to provide excellent RDS(ON) land ow gate charge. This device is suitable for power m
(21 views)
PNM8PN03R13 (Prisemi)
N-Channel MOSFET
Description
The PNM8PN03R13 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a load s
(19 views)
PNMT20V2SA (Prisemi)
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching , low on-resistance and cost-effectiveness. Trench Power LV MOSFET technology
(19 views)
PNMUT20V06 (Prisemi)
N-Channel MOSFET
Description
The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 20
MOSFET Product Summary
RDS(on)(Ω)
ID(A)
0.3@
(18 views)
PNMT6N1-LB (Prisemi)
Transistor
Feature
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. PNMT6N1-LB is composed by a transistor and a MOSFET
Transistor:
Very lo
(18 views)
