Weida Semiconductor Datasheet | Specifications & PDF Download

www.DataSheet4U.com YOUDA INTEGRATED CIRCUIT YD7000 POWER AMPLIFIER FOR HEADPHONE STEREOS¡ª DESCRIPTION The YD7000 is a low power audio amplifier i

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1*WCMA2016U4B WCMA2016U4B 128K x 16 Static RAM Features • High Speed — 55ns and 70ns speed availability • Low Voltage range: — 2.7V-3.3V • Ultra-low

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WCSS0232V1P Revised: February 7, 2002 WCSS0232V1P 64K x 32 Synchronous-Pipelined Cache RAM Features • Supports 133-MHz bus for Pentium® and PowerPC

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WCMA2008U1B WCMA2008U1B 256K x 8 Static RAM Features • High Speed — 70ns availability • Voltage range — 2.7V–3.3V • Ultra low active power — Typical

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A2008U1X WCMA2008U1X 256K x 8 Static RAM Features • High Speed — 70ns availability • Voltage range — 2.7V–3.6V • Ultra low active power — Typical ac

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WCMA4008C1X 512K x 8 Static RAM Features • Voltage Range — 4.5V–5.5V • Low active power — Typical active current: 2.5 mA @ f = 1 MHz • • • • • — Typi

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Y62147BV L™ WCMA4016U1X 256K x 16 Static RAM Features • Low voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with

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WCMB4016R4X 256K x 16 Static RAM Features • Low voltage range: — 1.65V−1.95V • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz •

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ADVANCE INFORMATION WCMC1616V9X Features • 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low act

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Y7C1350B WCSN0436V1P 128Kx36 Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices IDT71V546,

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Y7C1032 WCSS0418V1F 256K x 18 Synchronous 3.3V Cache RAM Features • Supports 117-MHz microprocessor cache systems with zero wait states • 256K by 18

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Y7C1327 WCSS0418V1P 256K x 18 Synchronous-Pipelined Cache RAM Features • Supports 100-MHz bus for Pentium and PowerPC™ operations with zero wait st

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Y7C1032 WCSS0418V1F 256K x 18 Synchronous 3.3V Cache RAM Features • Supports 117-MHz microprocessor cache systems with zero wait states • 256K by 18

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WCMA1008C1X 128K x 8 Static RAM Features • Voltage Range — 4.5V–5.5V • Low active power — Typical active current: 6 mA @ f = fmax (70 ns speed) • Low

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A1008U1X WCMA1008U1X 128K x 8 Static RAM Features • High Speed — 55ns and 70ns availability • Voltage range — 2.7V–3.6V • Ultra low active power — T

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1 WCMA1016U4X 64K x 16 Static RAM Features • High Speed — 55ns and 70ns availability • Low voltage range — 2.7V−3.6V • Ultra-low active power • Low

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WCMA2016U4X WCMA2016U4X 128K x 16 Static RAM Features • Low Voltage range: — 2.7V-3.3V • Ultra-low active power — Typical active current: 1.5 mA @ f

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WCMB2016R4X 128K x 16 Static RAM Features • Low voltage range: — 1.65V−1.95V • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz •

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ADVANCE INFORMATION General Physical Specification WCMC2016V1X 128K x 16 Pseudo Static RAM DIE Substrate Connection Req.: Ground Wafer Diameter [mm]

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ADVANCE INFORMATION WCMC8016V9X 8Mb (512K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access Time: 70ns • Ultra-low active

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