Datasheet Details
- Part number
- IXBH10N170
- Manufacturer
- IXYS Corporation
- File Size
- 622.84 KB
- Datasheet
- IXBH10N170_IXYSCorporation.pdf
- Description
- Bipolar MOS Transistor
IXBH10N170 Description
www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat.
IXBH10N170 Features
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Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268
1.13/10Nm/lb. in. 6 4 g g
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High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low c
IXBH10N170 Applications
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BVCES VGE(th) ICES IGES VCE(sat)
IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperature Coefficent VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
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AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode p
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