Datasheet Details
- Part number
- IXBH16N170A
- Manufacturer
- IXYS Corporation
- File Size
- 51.85 KB
- Datasheet
- IXBH16N170A_IXYSCorporation.pdf
- Description
- Bipolar MOS Transistor
IXBH16N170A Description
Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) t.
IXBH16N170A Features
* Monolithic fast reverse diode
* High Blocking Voltage
* JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
* Low switching losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Molding epoxies meet UL 94 V-0 f
IXBH16N170A Applications
* AC motor speed control
* Uninterruptible power supplies (UPS)
* Switched-mode and resonant-mode power supplies
* Capacitor discharge circuits Advantages
* Lower conduction losses than MOSFETs High power density Suitable for surf
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