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IXBH9N160G - Monolithic Bipolar MOS Transistor

IXYS Corporation

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Datasheet Details

Part number: IXBH9N160G
Manufacturer: IXYS Corporation
File Size: 177.33 KB
Datasheet: IXBH9N160G_IXYSCorporation.pdf
Description: Monolithic Bipolar MOS Transistor

IXBH9N160G Product details

Features

High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON.
MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage.
Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Characteristics.
International Standard Package - Reverse Conducting Capability Advantages.
Low Gate Drive Requirement.
High Power Density.

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IXBH9N160G Stock/Price