2110-2170 Datasheet | Specifications & PDF Download

PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for

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PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff

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PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for

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PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f

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BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product

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PA1223 5 Watt Amplifier 2110-2170 MHz. 28v. GaAs Ultra Linear Power Features (typical values) High IP3

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PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff

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BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product

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PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internal

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PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for

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PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for

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PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for

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BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product

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DATA SHEET SKY65120-21: 2110-2170 MHz High Linearity, 2 W Power Amplifier Applications • WCDMA, PCS, DCS, UMTS, TD-SCDMA • Repeaters • ISM band trans

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BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product

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PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for

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PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for

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PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff

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PRELIMINARY DATA SHEET SKY65387-11: 2110-2170 MHz Variable Gain Amplifier Applications • WCDMA base stations • Femto cells Description Skyworks SKY6

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DATA SHEET SKY65120: 2110–2170 MHz High Linearity 2 W Power Amplifier Applications G G G G Functional Block Diagram Active Bias WCDMA/PCS/DCS/UMTS/

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