PA1223 (Tyco Electronics)
2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier
PA1223
5 Watt
Amplifier
2110-2170 MHz.
28v. GaAs Ultra Linear Power
Features (typical values)
High IP3
(29 views)
BLD6G22LS-50 (Ampleon)
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product
(17 views)
PTF180101S (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101
LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internal
(16 views)
BLD6G22L-50 (NXP Semiconductors)
W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Rev. 01 — 15 December 2009 Objective data sheet
1. Product
(16 views)
BLD6G22L-50 (Ampleon)
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product
(15 views)
BLD6G22LS-50 (NXP Semiconductors)
W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G22L-50; BLD6G22LS-50
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
Rev. 01 — 15 December 2009 Objective data sheet
1. Product
(14 views)
PTF180101 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101
LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz
Description
The PTF180101 is a 10 W, internal
(13 views)
PTF211301A (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f
(12 views)
PTF210451 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451
LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for
(11 views)
SKY65120-21 (Skyworks Solutions)
2110-2170 MHz High Linearity / 2W Power Amplifier
DATA SHEET
SKY65120-21: 2110-2170 MHz High Linearity, 2 W Power Amplifier
Applications
• WCDMA, PCS, DCS, UMTS, TD-SCDMA • Repeaters • ISM band trans
(11 views)
PTF211301 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz
Description
The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f
(10 views)
PTF210301 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for
(9 views)
PTF210301A (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for
(9 views)
PTF210301E (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for
(9 views)
PTF210901E (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for
(9 views)
SKY65120 (Skyworks Solutions)
2110-2170 MHz High Linearity / 2W Power Amplifier
DATA SHEET
SKY65120: 2110–2170 MHz High Linearity 2 W Power Amplifier
Applications
G G G G
Functional Block Diagram
Active Bias
WCDMA/PCS/DCS/UMTS/
(9 views)
PTF210901 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for
(8 views)
PTF211802E (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diff
(8 views)
PTF211802 (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diff
(7 views)
PTF210451E (Infineon Technologies AG)
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451
LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET intended for
(6 views)