.
Infineon Technologies AG
PTF211802A - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff.
NXP Semiconductors
BLD6G22LS-50 - W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product .
Infineon Technologies AG
PTF211802 - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff.
Infineon Technologies AG
PTF211802E - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diff.
NXP Semiconductors
BLD6G22L-50 - W-CDMA 2110 MHz To 2170 MHz Fully Integrated Doherty Transistor
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product .
Ampleon
BLD6G22L-50 - W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product .
Ampleon
BLD6G22LS-50 - W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product .
Tyco Electronics
PA1223 - 2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier
PA1223 5 Watt Amplifier 2110-2170 MHz. 28v. GaAs Ultra Linear Power Features (typical values) High IP3 .
Infineon Technologies AG
PTF180101 - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internal.
Infineon Technologies AG
PTF180101S - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internal.
Infineon Technologies AG
PTF210301 - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.
Infineon Technologies AG
PTF210301A - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.
Infineon Technologies AG
PTF210301E - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.
Infineon Technologies AG
PTF210451 - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for .
Infineon Technologies AG
PTF210451E - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for .
Infineon Technologies AG
PTF210901 - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for.
Infineon Technologies AG
PTF210901E - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for.
Infineon Technologies AG
PTF211301 - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.
Infineon Technologies AG
PTF211301A - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended f.
Skyworks Solutions
SKY65387-11 - 2110-2170 MHz Variable Gain Amplifier
PRELIMINARY DATA SHEET SKY65387-11: 2110-2170 MHz Variable Gain Amplifier Applications • WCDMA base stations • Femto cells Description Skyworks SKY6.