.
Infineon Technologies AG
17
PTF180601 - LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description The PTF180601 is a 60 W, internally matched GOLDM.
Infineon
11
PTFA092211EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th.
Infineon Technologies AG
7
PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for E.
Infineon Technologies AG
7
PTF080901E - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E.
Infineon Technologies AG
7
PTF210301A - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for.
Infineon
6
PTFB212507SH - Thermally-Enhanced High Power RF LDMOS FET
PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended f.
Infineon Technologies AG
6
PTF080601 - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET .
Infineon
6
PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.
Infineon
6
PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.
Infineon Technologies
5
PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-.
Infineon Technologies AG
5
PTF080601A - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET .
Infineon Technologies
5
PTFA190451E - Thermally-Enhanced High Power RF LDMOS FET
PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U.
Infineon Technologies
5
PTFA190451F - Thermally-Enhanced High Power RF LDMOS FET
PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U.
Infineon
5
PTFA211001E - Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, interna.
Infineon
4
PTFB211501E - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally.
Infineon Technologies AG
4
PTF180101 - LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internal.
Infineon Technologies AG
4
PTF180901E - GSM/EDGE RF Power FET
Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS .
Infineon
4
PTFC270051M - High Power RF LDMOS Field Effect Transistor
PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suita.
Infineon Technologies
4
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET
PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz www.DataSheet.
Infineon Technologies
4
PTFA191001F - Thermally-Enhanced High Power RF LDMOS FET
PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz www.DataSheet4.