LFC semi Datasheet | Specifications & PDF Download

LMNP2062RF Rev. 1.0 LMNP2062RF 20V N+P Dual Channel MOSFETs Features  N-Channel  20V/4.0A, RDS(ON)=30mΩ@VGS=4.5V  20V/3.0A, RDS(ON)=30mΩ@VGS=2.5V

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LMNN7002KY Rev. 1.0 LMNN7002KY Dual N-Channel Enhancement Mode MOSFET Features  60V/0.5A, RDS(ON)=3.0Ω@VGS=10V  60V/0.2A, RDS(ON)=4.0Ω@VGS=4.5V 

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LMNN3218SF Rev. 1.0 LMNN3218SF 30V Dual N-Channel MOSFETs Features  30V, 7.3A, RDS(ON)=22mΩ@VGS=10V  Improved dv/dt capability  Fast switching 

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LMP3153JZF Rev. 1.0 LMP3153JZF 30V P-Channel MOSFET Features  -30V/-4.8A, RDS(ON)<54mΩ@VGS=-10V  -30V/-3.8A, RDS(ON)<72mΩ@VGS=-4.5V  -30V/-3.0A,

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LMN3320XF Rev. 1.0 LMN3106ZF 30V N-Channel MOSFETs Features  30V,54A, RDS(ON)<6mΩ@VGS=10V  High Power and current handing capability  Lead Free a

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LMN3660EJZF Rev. 1.0 LMN3660EJZF 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  SOT-23 package design Product De

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LMPBSS84JZF 60V P-Channel MOSFET LMPBSS84JZF Rev. 1.0 Features  -60V/-0.13A, RDS(ON)<10Ω@VGS=-5V  Super high density cell design for extremely low

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LMPBSS84JZF 60V P-Channel MOSFET LMPBSS84JZF Rev. 1.0 Features  -60V/-0.13A, RDS(ON)<10Ω@VGS=-5V  Super high density cell design for extremely low

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LMP3117DF Rev. 1.0 LMP3117DF 30V P-Channel MOSFET Features  -30V/-44A, RDS(ON)<14.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applica

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LMP1073KX5F Rev. 1.0 LMP1073KX5F 20V P-Channel Enhancement Mode MOSFETs Features  -20V/-0.5A, RDS(ON)=800mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)=1100mΩ@

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LMN1912 Rev. 1.0 20V N-Channel Enhancement Mode MOSFETs Features ● 20V, 1.8A, RDS(ON)=280mΩ@VGS=4.5V ● 20V, 1.5A, RDS(ON)=340mΩ@VGS=2.5V ● 20V, 1.2A

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LMP3153SF Rev. 1.0 LMP3153SF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=54mΩ@VGS=-10V  RDS(ON)=72mΩ@VGS=-4.5V  RDS(ON)=120mΩ@VGS=-2.

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LMP3335XF Rev. 1.0 LMP3335XF 30V P-Channel MOSFET Features  -30V/-90A, RDS(ON)<3.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applicat

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LMP3117ZF Rev. 1.0 LMP3117ZF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=13.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive A

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LMN3660EX7F Rev. 1.0 LMN3660EX5F 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  SOT-523 package design Product D

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LMN3660EX7F Rev. 1.0 LMN3660EX5F 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  SOT-523 package design Product D

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LMN22N10XF Rev. 1.0 LMN22N10XF 100V N-Channel MOSFET Features ● 100V,45A, RDS(ON) <22mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● 100

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LPM3810 Rev. 1.0 1.2A Synchronous Step-down Converter with Integrated Inductor Features  Integrated inductor, Power MOSFETs and controller  2.5V t

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