LFC semi Datasheet | Specifications & PDF Download

1.65V – 3.6V, 1x Low EMI Reduction IC LX606 Rev. 2.0 Features • FCC approved method of EMI attenuation • Proprietary “SaΦic™” technology, a non-PLL

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1.65V – 3.6V, 1x Ultra Low Power Mobile EMI Reduction IC LX304 Rev. 2.7 Features  FCC approved method of EMI attenuation  Proprietary “SaΦic™” tec

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1.65V – 3.6V, 1x Ultra Low Power Mobile EMI Reduction IC LX304 Rev. 2.7 Features  FCC approved method of EMI attenuation  Proprietary “SaΦic™” tec

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1.65V – 3.6V, 1x Ultra Low Power Mobile EMI Reduction IC LX304 Rev. 2.7 Features  FCC approved method of EMI attenuation  Proprietary “SaΦic™” tec

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1.65V – 3.6V, 1x Ultra Low Power Mobile EMI Reduction IC LX304 Rev. 2.7 Features  FCC approved method of EMI attenuation  Proprietary “SaΦic™” tec

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LMN3320XF Rev. 1.0 LMN3106ZF 30V N-Channel MOSFETs Features  30V,54A, RDS(ON)<6mΩ@VGS=10V  High Power and current handing capability  Lead Free a

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LMN3660EJZF Rev. 1.0 LMN3660EJZF 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  SOT-23 package design Product De

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LMPBSS84JZF 60V P-Channel MOSFET LMPBSS84JZF Rev. 1.0 Features  -60V/-0.13A, RDS(ON)<10Ω@VGS=-5V  Super high density cell design for extremely low

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LMPBSS84JZF 60V P-Channel MOSFET LMPBSS84JZF Rev. 1.0 Features  -60V/-0.13A, RDS(ON)<10Ω@VGS=-5V  Super high density cell design for extremely low

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LMP3117DF Rev. 1.0 LMP3117DF 30V P-Channel MOSFET Features  -30V/-44A, RDS(ON)<14.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applica

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LMP1073KX5F Rev. 1.0 LMP1073KX5F 20V P-Channel Enhancement Mode MOSFETs Features  -20V/-0.5A, RDS(ON)=800mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)=1100mΩ@

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LMN1912 Rev. 1.0 20V N-Channel Enhancement Mode MOSFETs Features ● 20V, 1.8A, RDS(ON)=280mΩ@VGS=4.5V ● 20V, 1.5A, RDS(ON)=340mΩ@VGS=2.5V ● 20V, 1.2A

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LMP3153SF Rev. 1.0 LMP3153SF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=54mΩ@VGS=-10V  RDS(ON)=72mΩ@VGS=-4.5V  RDS(ON)=120mΩ@VGS=-2.

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LMP3335XF Rev. 1.0 LMP3335XF 30V P-Channel MOSFET Features  -30V/-90A, RDS(ON)<3.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applicat

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LMP3117ZF Rev. 1.0 LMP3117ZF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=13.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive A

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LMN3660EX7F Rev. 1.0 LMN3660EX5F 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  SOT-523 package design Product D

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LMN3660EX7F Rev. 1.0 LMN3660EX5F 30V N-Channel Enhancement Mode MOSFET Features  Low Gate Charge  ESD Protected  SOT-523 package design Product D

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LMN22N10XF Rev. 1.0 LMN22N10XF 100V N-Channel MOSFET Features ● 100V,45A, RDS(ON) <22mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● 100

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