LFC semi Datasheet | Specifications & PDF Download

1.65V – 3.6V, 1x Ultra Low Power Mobile EMI Reduction IC LX304 Rev. 2.7 Features  FCC approved method of EMI attenuation  Proprietary “SaΦic™” tec

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LMP1073KX5F Rev. 1.0 LMP1073KX5F 20V P-Channel Enhancement Mode MOSFETs Features  -20V/-0.5A, RDS(ON)=800mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)=1100mΩ@

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LMP3825EJZF Rev. 1.0 LMP3825EJZF 30V P-Channel MOSFET Features  -20V/-0.5A, RDS(ON)<2500mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)<2900mΩ@VGS=-2.5V  -20V/

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LMPP3925EX7F Rev. 1.0 LMPP3925EX7F 30V P-Channel Enhancement Mode MOSFET Features  -30V/-0.27A, RDS(ON)=2500mΩ@VGS=-4.5V RDS(ON)=2900mΩ@VGS=-2.5V R

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LPD6010 Rev. 1.0 1.5MHz, 1.5A, High Efficiency PWM Step-Down DC/DC Converter Features  2.5V to 5.5V Input Voltage Range  Adjustable Output Voltage

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LMP02P15JZF Rev. 1.0 LMP02P15JZF 150V P-Channel MOSFET Features  -150V/-1A, RDS(ON)<750mΩ@VGS=-10V  Fast switching  Improved dv/dt capability  G

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LMN0910P 100V N-Channel MOSFET LMN0910P Rev. 1.0 Features ● 100V,2A, RDS(ON) =200mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● 100% EA

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LMN7002K Rev. 1.0 LMN7002K 60V N-Channel Enhancement Mode MOSFET Features ● 60V/0.5A, RDS(ON) =2.4Ω@VGS = 10V ● 60V/0.3A, RDS(ON) =3.0Ω@VGS = 4.5V ●

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LMNN3218SF Rev. 1.0 LMNN3218SF 30V Dual N-Channel MOSFETs Features  30V, 7.3A, RDS(ON)=22mΩ@VGS=10V  Improved dv/dt capability  Fast switching 

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1.65V – 3.6V, 1x Low EMI Reduction IC LX606 Rev. 2.0 Features • FCC approved method of EMI attenuation • Proprietary “SaΦic™” technology, a non-PLL

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LMN1072K Rev. 1.0 20V N-Channel Enhancement Mode MOSFET Features  20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V  20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V  20V/0.65A

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LMN22N10SF Rev. 1.0 LMN22N10SF 100V N-Channel Enhancement Mode MOSFET Features ● RDS(ON) = 22mΩ@VGS = 10V ● RDS(ON) = 32mΩ@VGS = 4.5V ● Improved dv/

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LMPP1073TX6F Rev. 1.0 LMPP1073TX6F 20V P-Channel Enhancement Mode MOSFET Features  -20V/-0.5A, RDS(ON)=900mΩ@VGS=-4.5V  -20V/-0.2A, RDS(ON)=1450mΩ

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LMN02N15TSF 150V N-Channel MOSFET LMN02N15TSF Rev. 1.0 Features ● 150V,1A, RDS(ON) =480mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● T

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LMP3117ZF Rev. 1.0 LMP3117ZF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=13.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive A

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1.65V – 3.6V, 1x Low EMI Reduction IC LX606 Rev. 2.0 Features • FCC approved method of EMI attenuation • Proprietary “SaΦic™” technology, a non-PLL

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1.65V – 3.6V, 1x Ultra Low Power Mobile EMI Reduction IC LX304 Rev. 2.7 Features  FCC approved method of EMI attenuation  Proprietary “SaΦic™” tec

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LMN3112D Rev. 1.0 LMN3112DF 30V N-Channel MOSFET Features  30V, 40A, RDS(ON)=12mΩ@VGS=10V  Improved dv/dt capability  Fast switching  100% EAS g

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LMNBSS123 Rev. 1.0 LMNBSS123 100V N-Channel Enhancement Mode MOSFET Features ● 100V, 0.17A, RDS(ON) =6.0Ω@VGS = 10V ● SOT-23 package design ● Lead(P

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