Fairchild Semiconductor
FDN335N - N-Channel MOSFET
FDN335N
April 1999
FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using
(4 views)
TY Semiconductor
FDN8601 - N-Channel MOSFET
SMD Type
Product specification
FDN8601
100 V, 2.7 A, 109 m: Features
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS
(4 views)
ON Semiconductor
FDN337N - N-Channel MOSFET
Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect
FDN337N
General Description SUPERSOTt−3 N−Channel logic level enhancement mode po
(4 views)
Fairchild Semiconductor
FDN361BN - N-Channel MOSFET
FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
Fe bruary 2009
FDN361BN
30V N-Channel, Logic Level, PowerTrench MOSFET
General Descriptio
(3 views)
Fairchild Semiconductor
FDN86246 - MOSFET
FDN86246 N-Channel PowerTrench® MOSFET
December 2010
FDN86246
N-Channel PowerTrench® MOSFET
150 V, 1.6 A, 261 m:
Features
General Description
M
(3 views)
ON Semiconductor
FDN352AP - P-Channel MOSFET
DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP
VDSS −30 V
RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V
ID MAX −1.3 A −1
(3 views)
ON Semiconductor
FDN304PZ - P-Channel MOSFET
MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ
General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low volta
(3 views)
Fairchild Semiconductor
FDN86265P - MOSFET
FDN86265P P-Channel PowerTrench® MOSFET
May 2014
FDN86265P
P-Channel PowerTrench® MOSFET
-150 V, -0.8 A, 1.2 Ω
Features
General Description
Max
(2 views)
Fairchild Semiconductor
FDN302P - P-Channel MOSFET
FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gat
(2 views)
Fairchild Semiconductor
FDN304P - P-Channel MOSFET
FDN304P
January 2001
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s
(2 views)
Fairchild Semiconductor
FDN308P - P-Channel MOSFET
FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged ga
(2 views)
Fairchild Semiconductor
FDN327N - N-Channel MOSFET
FDN327N
October 2001
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench® MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high vol
(2 views)
Fairchild Semiconductor
FDN336P - single P-Channel MOSFET
November 1998
FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using
(2 views)
Fairchild Semiconductor
FDN338P - P-Channel MOSFET
FDN338P
FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET
November 2013
General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’
(2 views)
Fairchild Semiconductor
FDN5618P - 60V P-Channel MOSFET
FDN5618P
July 2000 PRELIMINARY
FDN5618P
60V P-Channel Logic Level PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s
(2 views)
Fairchild Semiconductor
FDN5630 - 60V N-Channel MOSFET
FDN5630
March 2000
FDN5630
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the
(2 views)
Fairchild Semiconductor
FDN304PZ - P-Channel MOSFET
FDN304PZ
March 2003
FDN304PZ
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s
(2 views)
ON Semiconductor
FDN5632N-F085 - N-Channel Logic Level PowerTrench MOSFET
MOSFET – N-Channel, Logic Level, POWERTRENCH)
60 V, 1.6 A, 98 mW
FDN5632N-F085
Features
• RDS(on) = 98 mW at VGS = 4.5 V, ID = 1.6 A • RDS(on) = 82 m
(2 views)
ON Semiconductor
FDN5630 - N-Channel Power MOSFET
MOSFET – N-Channel, POWERTRENCH)
60 V
FDN5630
General Description This N−Channel MOSFET has been designed specifically
to improve the overall efficien
(2 views)
ON Semiconductor
FDN339AN - N-Channel MOSFET
MOSFET – N-Channel POWERTRENCH)
2.5 V Specified
FDN339AN
Description This N−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced Power
(2 views)