Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.
Features
- include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2
PTFB191501F Package H-37248-2
PTFB191501E PTFB191501F
IMD (dBc)
Efficiencydiscontinu(%)ed products
Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.
