| No |
Part Number |
Description |
Manufacture |
PDF |
| 257 |
FDS100BA60 |
DIODE MODULE
DIODE MODULE
F.R.D.
FRD/FDS100BA60
UL;E76102 M FRD FDS 100BA is a high speed dual diode module designed for high power switching application. FRD FDS 100BA is suitable for high |
SanRex Corporation
|
|
| 256 |
FDS100CA100 |
(FDS100CA100 / FDS100CA120) DIODE MODULE
DIODE MODULE
F.R.D.
FDS100CA100/120
UL;E76102 M FDS100CA is a high speed (fast recovery) diode module designed for high power switching application. FDS100CA is suitable for hig |
SanRex Corporation
|
|
| 255 |
FDS100CA120 |
(FDS100CA100 / FDS100CA120) DIODE MODULE
DIODE MODULE
F.R.D.
FDS100CA100/120
UL;E76102 M FDS100CA is a high speed (fast recovery) diode module designed for high power switching application. FDS100CA is suitable for hig |
SanRex Corporation
|
|
| 254 |
FDS2070N3 |
150V N-Channel PowerTrench MOSFET
FDS2070N3
May 2003
FDS2070N3
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using |
Fairchild Semiconductor
|
|
| 253 |
FDS2070N7 |
150V N-Channel PowerTrench MOSFET
FDS2070N7
May 2003
FDS2070N7
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using |
Fairchild Semiconductor
|
|
| 252 |
FDS2170N3 |
200V N-Channel PowerTrench MOSFET
FDS2170N3
May 2003
FDS2170N3
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using |
Fairchild Semiconductor
|
|
| 251 |
FDS2170N7 |
200V N-Channel PowerTrench MOSFET
FDS2170N7
May 2003
FDS2170N7
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using |
Fairchild Semiconductor
|
|
| 250 |
FDS2570 |
150V N-Channel PowerTrench MOSFET
FDS2570
June 2000 PRELIMINARY
FDS2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC convert |
Fairchild Semiconductor
|
|
| 249 |
FDS2572 |
150V/ 0.047 Ohms/ 4.9A/ N-Channel UltraFET Trench MOSFET
FDS2572
October 2001
FDS2572
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET
General Description
® UltraFET devices combine characteristics that enable benchmark efficiency in power conv |
Fairchild Semiconductor
|
|
| 248 |
FDS2582 |
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
FDS2582
September 2002
FDS2582
N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ
Features
• r DS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charg |
Fairchild Semiconductor
|
|
| 247 |
FDS2670 |
200V N-Channel PowerTrench MOSFET
FDS2670
June 2000 PRELIMINARY
FDS2670
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC convert |
Fairchild Semiconductor
|
|
| 246 |
FDS2672 |
N-Channel UltraFET
FDS2672 N-Channel UltraFET Trench® MOSFET
August 2006
FDS2672 N-Channel UltraFET Trench® MOSFET
200V, 3.9A, 70mΩ
Features
Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A |
Fairchild Semiconductor
|
|
