GaN-on-SiC Datasheet | Specifications & PDF Download

GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Description The GTVA263202FC is a 340-watt (P3dB) GaN on S

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(4 views)

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE

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TGF2023-20 90 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum P

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

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WS1A2639 GaN on SiC Power Amplifier Module for 5G Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN

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GTRB424908FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 4000 MHz Description The GTRB424908FC/1 is a 450-watt (P3dB) GaN o

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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(3 views)

GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high

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(2 views)

WSGPA01 10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) desig

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GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Description The GTRA412852FC is a 235-watt (P3dB) GaN on Si

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si

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WS1A3640 GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspee

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GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si

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GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Description The GTRA263902FC is a 370-watt (P3dB) GaN on Si

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GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 – 2690 MHz Description The GTRB267008FC is a 620-watt (P4dB) GaN on Si

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