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GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si.GTRA262802FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si.GTRA360502M - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra.TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT
Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC -.GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S.GTRA362002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Description The GTRA362002FC is a 200-watt (P3dB) GaN on S.GTRA184602FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si.WSGPA01 - GaN on SiC General Purpose Power Amplifier
WSGPA01 10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) desig.GTRA412852FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Description The GTRA412852FC is a 235-watt (P3dB) GaN on Si.GTRA263902FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Description The GTRA263902FC is a 370-watt (P3dB) GaN on Si.GTVA212701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Description The GTVA212701FA is a 270-watt GaN on SiC high .GTRB424908FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB424908FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 4000 MHz Description The GTRB424908FC/1 is a 450-watt (P3dB) GaN o.GTRB266908FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si.GTRB206002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB206002FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 48 V, 1930 – 2020 MHz Description The GTRB206002FC/1 is a 500-watt (P3dB) GaN .GTRA364002FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S.GTVA355001FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-.GTVA262701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high.TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE .TGF2023-05 - 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum P.TGF2023-20 - 100 Watt Discrete Power GaN on SiC HEMT
TGF2023-20 90 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum P.