GaN-on-SiC Datasheet | Specifications & PDF Download

GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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GaN on SiC Transistor, 30 W, 28 V DC - 6 GHz Features • Saturated Power: 30 W • Drain Efficiency: 67% • Small Signal Gain: 15 dB • Lead-Free Air Cavi

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

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GTRB424908FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 4000 MHz Description The GTRB424908FC/1 is a 450-watt (P3dB) GaN o

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GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-

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GaN on SiC Transistor, 9 W, 28 V DC – 8 GHz Features • Saturated Power: 9 W • Drain Efficiency: 55 % • Small Signal Gain: 14 dB • Lead-Free Air Cavit

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si

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GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-

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GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN o

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2731GN-120V Datasheet Class-AB GaN-on-SiC HEMT Transistor Class-AB GaN-on-SiC HEMT Transistor Microsemi Corporate Headquarters One Enterprise, Aliso

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S

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WS1A3640 GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspee

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GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Description The GTVA212701FA is a 270-watt GaN on SiC high

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GTRB206002FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 48 V, 1930 – 2020 MHz Description The GTRB206002FC/1 is a 500-watt (P3dB) GaN

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Ca

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GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Ca

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GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz Description The GTRA263902FC is a 370-watt (P3dB) GaN on Si

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