GaN-on-SiC Datasheet | Specifications & PDF Download

GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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WS1A3640 GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspee

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GTRB267008FC Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 – 2690 MHz Description The GTRB267008FC is a 620-watt (P4dB) GaN on Si

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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GaN on SiC Transistor, 8 W, 28 V DC - 6 GHz Features • Saturated Power: 8 W • Drain Efficiency: 69% • Small Signal Gain: 19 dB • DFN 3 x 4, 12 L Plas

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GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high

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TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE

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TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE

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TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum P

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TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum P

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TGF2023-20 90 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum P

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Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC -

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S

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GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Description The GTRA362002FC is a 200-watt (P3dB) GaN on S

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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WSGPA01 10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier Description The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) desig

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GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Description The GTRA374902FC is a 450-watt (P3dB) GaN on Si

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GTRA412852FC Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz Description The GTRA412852FC is a 235-watt (P3dB) GaN on Si

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