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3DD4204D - Silicon NPN Power Transistor
INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification 3DD4204D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide .3DD5024 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-.3DD207I - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C.3DD207 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD207 DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation v.3DD102 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE.3DD102C - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·C.3DD8F - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD8E - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD8D - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage- : VCE.3DD8C - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD8B - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD8A - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD7G - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7G DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD7F - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD7E - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD7C - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD7B - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD7A - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO.3DD15A - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE.3DD15 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A.