Inchange Semiconductor 3DD Datasheet | Specifications & PDF Download

INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification 3DD4204D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD207 DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation v

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage- : VCE

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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isc Silicon NPN Power Transistor 3DD4515 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Volta

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101B DESCRIPTION ·With TO-3 packaging ·Large collector current

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·C

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·C

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)C

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD8A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7G DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD7F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO

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