PTFB183408SV - High Power RF LDMOS Field Effect Transistor

Infineon Technologies

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Datasheet Details

Part number: PTFB183408SV
Manufacturer: Infineon ↗ Technologies
File Size: 250.19 KB
Datasheet: PTFB183408SV-InfineonTechnologies.pdf
Description: High Power RF LDMOS Field Effect Transistor

PTFB183408SV Product details

Description

The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 1805 to 1880 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless ﬂange. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB183408SV Package H-37275G-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD Low IMD Up -40 25 20 -45 15 -50 A.

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High Power LDMOS Field Effect Transistor Infineon Technologies

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