PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs

Infineon Technologies

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Datasheet Details

Part number: PTFB192503EL
Manufacturer: Infineon ↗ Technologies
File Size: 442.12 KB
Datasheet: PTFB192503EL-InfineonTechnologies.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL Product details

Description

The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

Features

include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB192503FL Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing BW 3.84MHz 20 50 19 Gain 40 18.

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Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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