Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.
Features
- include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6
PTFB192503FL Package H-34288-4/2
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
20 50
19 Gain
40
18.
