Datasheet4U Logo Datasheet4U.com

PTFB241402F High Power RF LDMOS Field Effect Transistor

PTFB241402F Description

PTFB241402F High Power RF LDMOS Field Effect Transistor 140 W, 2300 * 2400 MHz .
The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.

PTFB241402F Features

* Broadband internal matching
* Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%
* Increased negative gate-source voltage range for improved performance in Doherty amplifiers
* Integrated ESD protection
* Exce

PTFB241402F Applications

* in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB241402F Package H-37248-4 Gain (dB) Efficiency (%) CW Performance, Single Side VDD = 30 V, IDQ = 660 mA 17.4 60 17.2 55

📥 Download Datasheet

Preview of PTFB241402F PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PTFB201402FC - High Power RF LDMOS Field Effect Transistor (Infineon)
  • PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
  • PTFB211501E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
  • PTFB211501F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
  • PTFB211503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
  • PTFB211503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
  • PTFB211803EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
  • PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)

📌 All Tags

High Power LDMOS Field Effect Transistor Infineon Technologies
Infineon Technologies PTFB241402F-like datasheet