GHV-2 Datasheet | Specifications & PDF Download

CGHV1F006S 6 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed

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CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is designe

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CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transisto

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transist

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CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HPA Description The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output p

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CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor

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CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron M

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CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HE

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

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CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

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CGHV14800 800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14800 is a gallium nitride (GaN) high electron mo

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CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Description The CGHV50200F is a gallium nitride (GaN) high electron mobility tr

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CGHV14250 250 W, DC - 1.6 GHz, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility t

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CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transist

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description The CGHV14500 is a gallium nitride (GaN) high electron mobility transis

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CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

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CGHV1F006S 6 W, DC - 15 GHz, 40 V, GaN HEMT Description Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transisto

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CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) d

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