Inchange Semiconductor 2SB Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor 2SB857 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Hi

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isc Silicon PNP Power Transistor 2SB891 DESCRIPTION ·High Collector Current -IC= -2A ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Compl

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capabi

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Em

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION ¡¤With TO-220Fa package ¡¤Low collector satu

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isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-

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isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching spe

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -3A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good

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isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- :

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isc Silicon PNP Power Transistor 2SB834 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Vo

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isc Silicon PNP Power Transistor 2SB1152 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area

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isc Silicon PNP Power Transistor 2SB526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement t

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isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2S

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isc Silicon PNP Power Transistor DESCRIPTION ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100%

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isc Silicon PNP Power Transistor 2SB688 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min) ·Good Linearity of hFE ·Wide Area of Safe O

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -3A ·Comp

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isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain-

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isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltag

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