Inchange Semiconductor 2SB Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% tested ·Minimum Lot-to-Lot variations for

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good

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isc Silicon PNP Darlington Power Transistor 2SB955 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Breakdown Voltag

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isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- :

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Em

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capabi

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isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain-

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isc Silicon PNP Power Transistor DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avala

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isc Silicon PNP Darlington Power Transistor 2SB897 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -10A ·Low Collector Saturation Voltage-

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isc Silicon PNP Darlington Power Transistor 2SB882 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -5A ·Wide Area of Safe Operation ·Low C

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isc Silicon PNP Power Transistor 2SB526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement t

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@IC= -5A ·High Speed Switching ·Complement to T

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION ¡¤With TO-220Fa package ¡¤Complement to type

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isc Silicon PNP Power Transistor 2SB941 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Comple

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isc Silicon PNP Power Transistor 2SB942 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -4A ·Good Linearity of hFE ·Comple

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collecto

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isc Silicon PNP Power Transistor 2SB948 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@IC= -10A ·High Speed Switching ·Comple

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isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·G

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Comp

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