MACOM CGH Datasheet | Specifications & PDF Download

CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HPA Description The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output p

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CGH40120F 120 W, RF Power GaN HEMT Description The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

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CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Description The CGHV50200F is a gallium nitride (GaN) high electron mobility tr

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

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CGH40006S 6 W, RF Power GaN HEMT, Plastic Description The CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). T

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CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description The CGHV14500 is a gallium nitride (GaN) high electron mobility transis

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CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description The CGH31240F is a gallium nitride (GaN) high

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CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) d

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CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HE

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CGH40025 25 W, RF Power GaN HEMT Description The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4002

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CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Description The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Description The CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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CGHV40200PP 200 W, 50 V, GaN HEMT Description The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH

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CGHV96130F 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN Amplifier Description The CGHV96130F is a gallium nitride (GaN) amplifier. This GaN

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CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

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CGHV40180F 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (H

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CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN Amplifier Description The CGHV96100F2 is a gallium nitride (GaN) amplifier. This Ga

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