.
MACOM
9
CGH31240F - GaN HEMT
CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description The CGH31240F is a gallium nitride (GaN) high.
MACOM
6
CGHV1F025S - GaN HEMT
CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
MACOM
3
CGHV40100 - 100W GaN HEMT
CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
MACOM
3
CGHV96130F - GaN HEMT
CGHV96130F 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description The CGHV96130F is a gallium nitride (GaN) High Electron Mobility Tr.
MACOM
2
CGHV40180P - 18W GaN HEMT
CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HE.
MACOM
2
CGH40045 - DC-4GHz RF Power GaN HEMT
CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Description The CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). T.
MACOM
2
CGH40025 - RF Power GaN HEMT
CGH40025 25 W, RF Power GaN HEMT Description The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4002.
MACOM
2
CGHV40200PP - GaN HEMT
CGHV40200PP 200 W, 50 V, GaN HEMT Description The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH.
MACOM
2
CGHV40030 - GaN HEMT
CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) d.
MACOM
2
CGHV96050F2 - GaN HEMT
CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description The CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility T.
MACOM
2
CGHV96100F2 - GaN HEMT
CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description The CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility .
MACOM
2
CGHV50200F - GaN HEMT
CGHV50200F 200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Description The CGHV50200F is a gallium nitride (GaN) high electron mobility tr.
MACOM
1
CGHV31500F1 - 500W GaN HPA
CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HPA Description The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output p.
MACOM
1
CGHV35120F - GaN HEMT
CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description The CGHV35120F is a gallium nitride (GaN) high electron mobility .
MACOM
1
CGH40006P - RF Power GaN HEMT
CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400.