| Part Number | Description |
|---|---|
| CMPA0060025F | GaN MMIC Power Amplifier |
| PXFE211507FC | Thermally-Enhanced High Power RF LDMOS FET |
| E6D10065A | 10A Silicon Carbide Schottky Diode |
| WSGPA01 | GaN on SiC General Purpose Power Amplifier |
| CGHV59350 | GaN HEMT |
| CMPA0060002D | GaN HEMT MMIC Power Amplifier |
| CGH35060P2 | GaN HEMT |
| EPW4-1200-S020A | Automotive Gen 4 Silicon Carbide Schottky Diode |
| C3M0120090D | Silicon Carbide Power MOSFET |
| WAS310M17BM3T | Half-Bridge Module |
| CAS300M12BM2 | Half-Bridge Module |
| CGHV50200F | GaN HEMT |
| E4D02120E | Silicon Carbide Schottky Diode |
| CGHV31500F1 | 500W GaN HEMT |
| WAS310M17BM3 | Half-Bridge Module |
| CGH21240F | GaN HEMT |
| CGH40180PP | RF Power GaN HEMT |
| CMPA5259050S | Power Amplifier |
| CAS480M12HM3 | Half-Bridge Module |
| CAR600M12HN6 | Half-Bridge Rectifier |
| PTVA084007NF | Thermally-Enhanced High Power RF LDMOS FET |
| CBB021M12FM3T | Full-Bridge Module |
| PXAC210552FC | Thermally-Enhanced High Power RF LDMOS FET |
| PXFE181507FC | Thermally-Enhanced High Power RF LDMOS FET |
| C4D30120D | 30A Silicon Carbide Schottky Diode |
| C3M0040120D | Silicon Carbide Power MOSFET |
| CAB450M12XM3 | Half-Bridge Module |
| CAS380M17HM3 | Half-Bridge Module |
| CPW2-0650-S010B | Gen 2 Silicon Carbide Schottky Diode |
| CPM2-1200-0025A | Wolfspeed SiC Gen 2 MOSFET |
| C4D05120A | 5A Silicon Carbide Schottky Diode |
| CGH55015P1 | GaN HEMT |
| C3D30065D | 30A Silicon Carbide Schottky Diode |
| C4D20120D | 20A Silicon Carbide Schottky Diode |
| WAS530M12BM3 | Half-Bridge Module |
| CPW3-0600-S003B | Gen 3 Silicon Carbide Schottky Diode |
| E3D30065D | 30A Silicon Carbide Schottky Diode |
| C4D08120E | 8A Silicon Carbide Schottky Diode |
| WAS175M12BM3 | Silicon Carbide Half-Bridge Module |
| E4M0013120K | Silicon Carbide Power MOSFET |
| CAS310M17BM3T | Half-Bridge Module |
| E6D10065G | 10A Silicon Carbide Schottky Diode |
| WAS530M12BM3T | Half-Bridge Module |
| PTFA220121M | High Power RF LDMOS Field Effect Transistor |
| PTFA080551E | Thermally-Enhanced High Power RF LDMOS FETs |
| PTFA080551F | Thermally-Enhanced High Power RF LDMOS FETs |
| PTMA210152M | Wideband RF LDMOS Integrated Power Amplifier |
| PXAC203302FV | Thermally-Enhanced High Power RF LDMOS FET |
| CGHV96100F2 | GaN HEMT |
| CMPA801B025D | Power Amplifier |
| CMPA601C025D | Power Amplifier |
| CMPA801B025 | Power Amplifier |
| CGHV1J006D | GaN HEMT Die |
| WAB400M12BM3 | Half-Bridge Module |
| C3M0015065K | Silicon Carbide Power MOSFET |
| WAB300M12BM3 | Half-Bridge Module |
| CAB011M12FM3 | All-Silicon Carbide Half-Bridge Module |
| C6D04065A | 4A Silicon Carbide Schottky Diode |
| CRD250DA12E-XM3 | 250kW High Performance Three Phase Reference Modula |
| PTFC270101M | High Power RF LDMOS Field Effect Transistor |
| EAB450M12XM3 | Half-Bridge Module |
| C3M0015065D | Silicon Carbide Power MOSFET |
| PTRA084858NF | Thermally-Enhanced High Power RF LDMOS FET |
| PTFC261402FC | Thermally-Enhanced High Power RF LDMOS FET |
| GTRA184602FC | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| CG2H40035 | RF Power GaN HEMT |
| C3M0025065J1 | Silicon Carbide Power MOSFET |
| C3M0040120J1 | Silicon Carbide Power MOSFET |
| GTRA374902FC | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| CGH55015P2 | GaN HEMT |
| CGHV14800 | GaN HEMT |
| C6D05170H | 5A Silicon Carbide Schottky Diode |
| CGH55015F2 | GaN HEMT |
| CGH21120F | GaN HEMT |
| E3M0032120K | Silicon Carbide Power MOSFET |
| E3M0021120K | Silicon Carbide Power MOSFET |
| C3M0025065K | Silicon Carbide Power MOSFET |
| CGH27030S | GaN HEMT |
| CGH27015 | GaN HEMT |
| CMPA5585030F | Power Amplifier |
| C6D10170H | 10A Silicon Carbide Schottky Diode |
| CGH31240F | GaN HEMT |
| CGH40006P | RF Power GaN HEMT |
| C3M0120065L | Silicon Carbide Power MOSFET |
| CG2H40025 | 28V RF Power GaN HEMT |
| CGH40010 | RF Power GaN HEMT |
| PTVA092407NF | Thermally-Enhanced High Power RF LDMOS FET |
| CGH35060F1 | GaN HEMT |
| GTVA261701FA | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| C3M0060065L | Silicon Carbide Power MOSFET |
| PTVA082407NF | Thermally-Enhanced High Power RF LDMOS FET |
| PTRA087008NB | Thermally-Enhanced High Power RF LDMOS FET |
| WS1A2639 | GaN on SiC Power Amplifier |
| CAS300M17BM2 | Half-Bridge Module |
| WS1A3640 | GaN on SiC Power Amplifier |
| E3M0016120K | Silicon Carbide Power MOSFET |
| C3D08065A | 8A Silicon Carbide Schottky |
| C3D12065A | 12A Silicon Carbide Schottky Diode |
| CBB032M12FM3T | Full-Bridge Module |
| C3D03060F | 3A Silicon Carbide Schottky Diode |
| C3M0160120D | N-Channel Power MOSFET |
| C2D05120E | 5A Silicon Carbide Schottky Diode |
| EPW4-1200-S010A | Automotive Gen 4 Silicon Carbide Schottky Diode |
| C3M0120100K | Silicon Carbide Power MOSFET |
| C3M0065090D | Silicon Carbide Power MOSFET |
| C3M0016120K | Silicon Carbide Power MOSFET |
| C2M0080120D | Silicon Carbide Power MOSFET |
| C3D04060A | 4A Silicon Carbide Schottky |
| C4D08120A | 8A Silicon Carbide Schottky Diode |
| E4D20120D | Silicon Carbide Power MOSFET |
| CPW3-0600-S004B | Gen 3 Silicon Carbide Schottky Diode |
| C3M0160120J | Silicon Carbide Power MOSFET |
| E3M0060065D | Silicon Carbide Power MOSFET |
| CPM3-1200-0075A | SiC Gen 3 MOSFET |
| C4D15120H | 15A Silicon Carbide Schottky Diode |
| CCB021M12FM3T | Silicon Carbide Six-Pack Module |
| C3D02060E | 2A Silicon Carbide Schottky Diode |
| CAB006A12GM3T | Silicon Carbide Half-Bridge Module |
| CAB006A12GM3 | Silicon Carbide Half-Bridge Module |
| C6D20065A | 20A Silicon Carbide Schottky Diode |
| C4D40120D | 40A Silicon Carbide Schottky Diode |
| C3M0065100K | Silicon Carbide Power MOSFET |
| C4D20120H | 20A Silicon Carbide Schottky Diode |
| C6D30065H | 30A Silicon Carbide Schottky Diode |
| C6D10065G | 10A Silicon Carbide Schottky Diode |
| WAS350M12BM3 | Half-Bridge Module |
| CPW6-1700-Z050A | Gen 6 Silicon Carbide Schottky Diode |
| C6D10065Q | 10A Silicon Carbide Schottky Diode |
| C3M0120065J | Silicon Carbide Power MOSFET |
| C3M0075120J | Silicon Carbide Power MOSFET |
| E3M0075120K | Silicon Carbide Power MOSFET |
| E4D10120A | 10A Silicon Carbide Schottky Diode |
| CPW4-1200-S015B | Gen 4 Silicon Carbide Schottky Diode |
| E3M0160120D | Silicon Carbide Power MOSFET |
| CPW4-1200-S008B | Gen 4 Silicon Carbide Schottky Diode |
| C3D10060A | 10A Silicon Carbide Schottky Diode |
| C4D05120E | 5A Silicon Carbide Schottky Diode |
| C6D16065D | 16A Silicon Carbide Schottky Diode |
| C3D06065E | 6A Silicon Carbide Schottky Diode |
| E3D08065G | 8A Silicon Carbide Schottky Diode |
| C4D15120D | 15A Silicon Carbide Schottky Diode |
| C3D16060D | 16A Silicon Carbide Schottky Diode |
| C3D08060G | 8A Silicon Carbide Schottky Diode |
| CGHV27015S | GaN HEMT |
| CAS175M12BM3 | Half-Bridge Module |
| CPW6-1700-Z010A | Gen 6 Silicon Carbide Schottky Diode |
| CPW6-1700-Z005A | Gen 6 Silicon Carbide Schottky Diode |
| C3M0045065D | Silicon Carbide Power MOSFET |
| HAS350M12BM3 | Half-Bridge Module |
| CPM3-1200-0016A | SiC Gen 3 MOSFET |
| E4M0015075K1 | Silicon Carbide Power MOSFET |
| E4M0060075K1 | Silicon Carbide Power MOSFET |
| C3M0045075K1 | Silicon Carbide Power MOSFET |
| C3M0350120J | Silicon Carbide Power MOSFET |
| C3M0075120K | Silicon Carbide Power MOSFET |
| E4M0015075J2 | Silicon Carbide Power MOSFET |
| C4D10120H | 10A Silicon Carbide Schottky Diode |
| CAB6R0A23GM4 | Half-Bridge Module |
| C2D10120A | SiC Schottky Diode |
| C2D05120A | 5A Silicon Carbide Schottky Diode |
| CHB011M12GM4 | T-Type Module |
| CAS530M12BM3T | Half-Bridge Module |
| CAS350M12BM3T | Half-Bridge Module |
| E6D20065G | 20A Silicon Carbide Schottky Diode |
| E6D30065D | 30A Silicon Carbide Schottky Diode |
| E6D20065A | 20A Silicon Carbide Schottky Diode |
| E6D40065A | 40A Silicon Carbide Schottky Diode |
| E6D16065H | 650V 16A Silicon Carbide Schottky Diode |
| CMPA0060002F1 | GaN MMIC Power Amplifier |
| CBB011M12GM4T | 1200V Silicon Carbide Full-Bridge Module |
| CBB011M12GM4 | 1200V Silicon Carbide Full-Bridge Module |
| GTVA126001EC | Thermally-Enhanced High Power RF GaN HEMT |
| PTAB182002FC | Thermally-Enhanced High Power RF LDMOS FET |
| PXAC261002FC | Thermally-Enhanced High Power RF LDMOS FET |
| PTVA120252MT | Thermally-Enhanced High Power RF LDMOS FET |
| PTAC210802FC | Thermally-Enhanced High Power RF LDMOS FET |
| GTVA123501FA | Thermally-Enhanced High Power RF GaN |
| GTVA104001FA | High Power RF GaN |
| CGHV96130F | GaN HEMT |
| CGHV96050F2 | GaN HEMT |
| CMPA9396025S | GaN MMIC Power Amplifier |
| CMPA801B030F | Power Amplifier |
| CMPA601C025F | Power Amplifier |
| CMPA801B030F1 | Power Amplifier |
| C2M0045170P | Silicon Carbide Power MOSFET |
| PTMC210124MD | Wideband LDMOS Two-stage Integrated Power Amplifier |
| CAB425M12XM3 | Half-Bridge Module |
| CGH40090PP | RF Power GaN HEMT |
| PTGA090304MD | Wideband LDMOS Two-stage Integrated Power Amplifier |
| GTRA362002FC | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| CMPA0530002S | GaN MMIC |
| GTRA360502M | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| PTRA094808NF | Thermally-Enhanced High Power RF LDMOS FET |
| PTRA093818NF | Thermally-Enhanced High Power RF LDMOS FET |
| C6D06065Q | 6A Silicon Carbide Schottky Diode |
| PTAC240502FC | Thermally-Enhanced High Power RF LDMOS FET |
| CMPA601J025D | 25W GaN HPA |
| C6D06065G | 6A Silicon Carbide Schottky Diode |
| PXAE261908NF | Thermally-Enhanced High Power RF LDMOS FET |
| GTRA412852FC | Thermally-Enhanced High Power RF GaN on SiC HEMT |
